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M29W512B Datasheet, Equivalent, Flash Memory.

512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory

512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory

 

 

 

Part M29W512B
Description 512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
Feature M29W512B 512 Kbit (64Kb x8, Bulk) Low Vo ltage Single Supply Flash Memory s SIN GLE 2.
7 to 3.
6V SUPPLY VOLTAGE for PROG RAM, ERASE and READ OPERATIONS ACCESS T IME: 55ns PROGRAMMING TIME – 10µs pe r Byte typical PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm Embedded Chip Erase algorithm – Sta tus Register Polling and Toggle Bits TS OP32 (NZ) 8 x 14mm PLCC32 (K) s s s s UNLOCK BYPASS PROGRAM COMMAND – Fa ster Production/Batch Programming LOW P OWER CONSUMPTION – Standby and Automa tic Standby 100,000 PROGRAM/ERASE CYCLE S 20 YEARS DATA RETENTION – Defectivi ty below 1 ppm/year ELECTRONI .
Manufacture ST Microelectronics
Datasheet
Download M29W512B Datasheet
Part M29W512B
Description 512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
Feature M29W512B 512 Kbit (64Kb x8, Bulk) Low Vo ltage Single Supply Flash Memory s SIN GLE 2.
7 to 3.
6V SUPPLY VOLTAGE for PROG RAM, ERASE and READ OPERATIONS ACCESS T IME: 55ns PROGRAMMING TIME – 10µs pe r Byte typical PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm Embedded Chip Erase algorithm – Sta tus Register Polling and Toggle Bits TS OP32 (NZ) 8 x 14mm PLCC32 (K) s s s s UNLOCK BYPASS PROGRAM COMMAND – Fa ster Production/Batch Programming LOW P OWER CONSUMPTION – Standby and Automa tic Standby 100,000 PROGRAM/ERASE CYCLE S 20 YEARS DATA RETENTION – Defectivi ty below 1 ppm/year ELECTRONI .
Manufacture ST Microelectronics
Datasheet
Download M29W512B Datasheet

M29W512B

M29W512B
M29W512B

M29W512B

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