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M93S46 Datasheet, Equivalent, Block Protection.

4Kbit / 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection

4Kbit / 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection

 

 

 

Part M93S46
Description 4Kbit / 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
Feature M93S66, M93S56 M93S46 4Kbit, 2Kbit and 1 Kbit (16-bit wide) MICROWIRE Serial Acc ess EEPROM with Block Protection FEATUR ES SUMMARY s Industry Standard MICROWIR E Bus s Figure 1.
Packages Single Sup ply Voltage: – 4.
5V to 5.
5V for M93Sx 6 – 2.
5V to 5.
5V for M93Sx6-W – 1.
8 V to 5.
5V for M93Sx6-R 8 1 PDIP8 (BN) s s Single Organization: by Word (x16 ) Programming Instructions that work on : Word or Entire Memory Self-timed Prog ramming Cycle with Auto-Erase User Defi ned Write Protected Area Page Write Mod e (4 words) Ready/Busy Signal During Pr ogramming Speed: – 1MHz Clock Rate, 1 0ms Write Time (Curren .
Manufacture ST Microelectronics
Datasheet
Download M93S46 Datasheet
Part M93S46
Description 4Kbit / 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
Feature M93S66, M93S56 M93S46 4Kbit, 2Kbit and 1 Kbit (16-bit wide) MICROWIRE Serial Acc ess EEPROM with Block Protection FEATUR ES SUMMARY s Industry Standard MICROWIR E Bus s Figure 1.
Packages Single Sup ply Voltage: – 4.
5V to 5.
5V for M93Sx 6 – 2.
5V to 5.
5V for M93Sx6-W – 1.
8 V to 5.
5V for M93Sx6-R 8 1 PDIP8 (BN) s s Single Organization: by Word (x16 ) Programming Instructions that work on : Word or Entire Memory Self-timed Prog ramming Cycle with Auto-Erase User Defi ned Write Protected Area Page Write Mod e (4 words) Ready/Busy Signal During Pr ogramming Speed: – 1MHz Clock Rate, 1 0ms Write Time (Curren .
Manufacture ST Microelectronics
Datasheet
Download M93S46 Datasheet

M93S46

M93S46
M93S46

M93S46

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