MMAD1105 Diode Array Datasheet

MMAD1105 Datasheet, PDF, Equivalent


Part Number

MMAD1105

Description

Switching Diode Array

Manufacture

Microsemi Corporation

Total Page 2 Pages
Datasheet
Download MMAD1105 Datasheet


MMAD1105
SCOTTSDALE DIVISION
MMAD1105 and MMAD1105e3
Switching Diode Array
Steering Diode TVS Array™
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 14-pin package for use as
steering diodes protecting up to eight I/O ports from positive ESD, EFT, or
surge by directing them to the positive side of the power supply (pin 14). An
external TVS diode may be added between the positive supply line and
ground to prevent overvoltage on the supply rail. They may also be used in
fast switching core-driver applications. This includes computers and peripheral
equipment such as magnetic cores, thin-film memories, plated-wire memories,
etc., as well as decoding or encoding applications. These arrays offer many
advantages of integrated circuits such as high-density packaging and
improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages
that may not be as user friendly in PC board mounting. They are available
with either Tin-Lead plating terminations or as RoHS Compliant with annealed
matte-Tin finish by adding an “e3” suffix to the part number.
*See MMAD1106(e3) for directing negative transients to ground.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Top Viewing Pin Layout
FEATURES
APPLICATIONS / BENEFITS
8 Diode Array
Molded 14-Pin SOIC Package
UL 94V-0 Flammability Classification
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
RoHS Compliant devices available by adding “e3” suffix
IEC 61000-4 compatible
61000-4-2 (ESD): Air 15kV, contact – 8 kV
61000-4-4 (EFT): 40A – 5/50 ns
61000-4-5 (surge): 12A, 8/20 µs
Low capacitance steering diode protection for high
frequency data lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I / O Ports
LAN
Switching Core Drivers
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20 µs)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (PD): 1500 mW (total)
Solder Temperatures: 260°C for 10 s (maximum)
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0 flammability
classification
TERMINALS: Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750 method 2026
MARKING: MSC logo, MMAD1105 or MMAD1105e3
and date code. Pin #1 is to the left of the dot or
indent on top of package
WEIGHT: 0.127 grams (approximate)
Tape & Reel packaging: 2500 pcs (STANDARD)
Carrier tube packaging: 55 pcs
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
PART
NUMBER
BREAKDOWN
VOLTAGE
VBR
@ IBR =100µA
V
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
V
LEAKAGE
CURRENT
IR
TA = 25°C
µA
LEAKAGE
CURRENT
IR
TA = 150°C
µA
CAPACITANCE
C
@0V
pF
REVERSE
RECOVERY
TIME
trr
ns
FORWARD
VOLTAGE
VF
IF = 10 mA
V
FORWARD
VOLTAGE
VF
IF = 100 mA
V
MIN
MAX
MAX
@VR
MAX
@VR
TYP
MAX
MAX
MAX
MMAD1105
MMAD1105e3
90
75
0.200
20
300
20
1.5
5.0 1.00 1.20
Copyright © 2005
6-28-2005 REV K
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

MMAD1105
SCOTTSDALE DIVISION
MMAD1105 and MMAD1105e3
Switching Diode Array
Steering Diode TVS Array™
Symbol
VBR
VRWM
VF
IR
C
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
OUTLINE AND CIRCUIT
DIM
A
B
C
D
F
G
J
K
L
P
INCHES
MIN
MAX
0.336
0.344
0.150
0.158
0.053
0.069
0.011
0.021
0.016
0.050
0.050 BSC
0.006
0.010
0.004
0.008
0.189
0.206
0.228
0.244
OUTLINE
MILLIMETERS
MIN
MAX
8.53 8.74
3.81 4.01
1.35 1.75
0.28 0.53
0.41 1.27
01.27 BSC
0.15 0.25
0.10 0.20
4.80 5.23
5.79 6.19
CIRCUIT CONFIGURATION
PAD LAYOUT
Copyright © 2005
6-28-2005 REV K
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2


Features SCOTTSDALE DIVISION MMAD1105 and MMAD11 05e3 Switching Diode Array Steering Dio de TVS Array™ WWW.Microsemi .COM DE SCRIPTION APPEARANCE These low capaci tance diode arrays are multiple, discre te, isolated junctions fabricated by a planar process and mounted in a 14-pin package for use as steering diodes prot ecting up to eight I/O ports from posit ive ESD, EFT, or surge by directing the m to the positive side of the power sup ply (pin 14). An external TVS diode may be added between the positive supply l ine and ground to prevent overvoltage o n the supply rail. They may also be use d in fast switching core-driver applica tions. This includes computers and peri pheral equipment such as magnetic cores , thin-film memories, plated-wire memor ies, etc., as well as decoding or encod ing applications. These arrays offer ma ny advantages of integrated circuits su ch as high-density packaging and improv ed reliability. This is a result of few er pick and place operations, smaller footprint, smaller weight.
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