MMAS40G10D ACCELEROMETER 40g Datasheet

MMAS40G10D Datasheet, PDF, Equivalent


Part Number

MMAS40G10D

Description

MICROMACHINED ACCELEROMETER 40g

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMAS40G10D Datasheet


MMAS40G10D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMAS40G10D/D
Micromachined Accelerometer
± 40g
The MMAS40G family of silicon capacitive, micro–machined accelerometers
features integral signal amplification, signal conditioning, a 4–pole low–pass
filter and temperature compensation. Zero–G offset, full scale span and filter
roll–off are factory set and require no external passives. A calibrated self–test
feature mechanically displaces the seismic mass with the application of a digital
self–test signal.
The MMAS40G incorporates a single polysilicon seismic mass, suspended
between two fixed polysilicon plates (G–cell). The forces of acceleration move
the seismic mass, thereby resulting in a change in capacitance. The G–cell is
sealed at the wafer level, creating a particle–free environment. The G–cell
features built–in damping and over–range stops to protect it from mechanical
shock.
MMAS40G accelerometers are ideally suited for automotive crash detection
and recording, vibration monitoring, automotive suspension control, appliance
control systems, etc.
Features
Minimum Full Scale Measurement ± 40g
Calibrated, True Self–Test
Standard 16–Pin Plastic DIP package
Senses Perpendicular to the Printed Circuit Board
Integral Signal Conditioning and 4–Pole Filter
Linear Output
Robust, High Shock Survivability
SIMPLIFIED BLOCK DIAGRAM
++
4 SELF–TEST
8 VS
+
g G–CELL
A
6 BYPASS
MMAS40G10D
MICROMACHINED
ACCELEROMETER
± 40g
16 15 14 13 12 11 10 9
1 234567 8
DIP PACKAGE
CASE 648C–03
PIN NUMBER (DIP)
1 N/C (1)
9 N/C (1)
2 N/C (1)
10 N/C (1)
3 N/C (1)
11 N/C (1)
4 Self–Test
12 N/C (1)
5 Output
13 N/C (1)
6 Bypass (2)
14 N/C (1)
7 GND
15 N/C (1)
8 VS (2)
16 N/C (1)
NOTES:
1. Internal connections. All N/C should be
tied to gnd, except pin 11 which must be
tied to pin 8.
2. Bypass to ground with 0.1 µF ceramic
capacitor for specified system perfor-
mance.
LOW–PASS FILTER
TEMPERATURE
COMPENSATION
5 OUTPUT
7 GND
REV 1
© MMotootroolrao, lIanc.S1e9n97sor Device Data
1

MMAS40G10D
MMAS40G10D
MAXIMUM RATINGS
Rating
Acceleration (biased each axis)
Acceleration (unbiased each axis)
Supply Voltage
Storage Temperature
Operating Temperature(6)
Symbol
G
G
VSmax
Tstg
TA
Value
± 500
± 2000
–0.3 to +7.0
– 40 to +105
– 40 to +85
Unit
g
g
Vdc
°C
°C
OPERATING CHARACTERISTICS (VS = 5.0 Vdc, TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Acceleration Range
G
±40 ±55
g
Output Drive Capability
– 0.2
0.2 mA
Supply Voltage
Supply Current
Full Scale Output Range
Sensitivity (over temperature range) (2) (3)
VS
4.75 5.0 5.25
V
IO — 5.0 7.0 mA
VFSO 0.3 — VS – 0.3 V
V/G 36 40 44 mV/g
Zero Acceleration Output (over temperature range) (3) (4)
Linearity
Voff
2.2 2.5 2.8
V
— — 0.5 2.0 %FSO
Transverse Sensitivity
— — 1.0 3.0 %FSO
Frequency Bandwidth
— 300 400 500 Hz
Noise
Self–Test Output Equivalent (5)
Self–Test Input Low
Self–Test Input High
Self–Test Input Current
— — 15 25 mVpk
GS 20 25 30 g
VSTL
— — 1.6 V
VSTH 3.4 — — V
— 10 70 200 µA
NOTES:
1. The output voltage increases from the Zero Acceleration Output for positive acceleration and decreases for negative acceleration. The
typical sensitivity is 40 mV/g. For example, with VS = 5.0 V, a + 20g input will result in a 3.3 V output. (Voutput = 2.5 + 0.040 x 20) and a – 20g
input will result in a 1.7 V output.
2. Sensitivity is a ratiometric parameter: V/G(Vs) = V/G(5 V) x (VS / 5 V).
3. The compensated temperature operating range is – 40 to +85°C.
4. Zero Acceleration Output is a ratiometric parameter: Voff(Vs) = Voff(5 V) x (VS / 5 V).
5. Equivalent output in response to a Logic Level One on the self–test pin.
6. Additional temperature range available. Consult factory.
ORDERING INFORMATION
Device
Temperature Range
MMAS40G10D
–40 to +85°C
Case No.
Case 648C–03
Package
Plastic DIP
2 Motorola Sensor Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMAS40G10D/D Mi cromachined Accelerometer ± 40g The MM AS40G family of silicon capacitive, mic ro–machined accelerometers features i ntegral signal amplification, signal co nditioning, a 4–pole low–pass filte r and temperature compensation. Zero– G offset, full scale span and filter ro ll–off are factory set and require no external passives. A calibrated self test feature mechanically displaces th e seismic mass with the application of a digital self–test signal. The MMAS4 0G incorporates a single polysilicon se ismic mass, suspended between two fixed polysilicon plates (G–cell). The for ces of acceleration move the seismic ma ss, thereby resulting in a change in ca pacitance. The G–cell is sealed at th e wafer level, creating a particle–fr ee environment. The G–cell features b uilt–in damping and over–range stop s to protect it from mechanical shock. MMAS40G accelerometers are ideally suited for automotive crash detection and recording, vi.
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