MMBD101 BARRIER DIODES Datasheet

MMBD101 Datasheet, PDF, Equivalent


Part Number

MMBD101

Description

SILICON SCHOTTKY BARRIER DIODES

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBD101 Datasheet


MMBD101
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for use in detector
and ultra–fast switching circuits. Supplied in an inexpensive plastic package for
low–cost, high–volume consumer requirements. Also available in Surface Mount
package.
Low Noise Figure — 6.0 dB Typ @ 1.0 GHz
Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
High Forward Conductance — 0.5 Volts (Typ) @ IF = 10 mA
Order this document
by MBD101/D
MBD101
MMBD101LT1
Motorola Preferred Devices
SILICON SCHOTTKY
BARRIER DIODES
2
CATHODE
1
ANODE
3
CATHODE
1
ANODE
1
2
CASE 182– 02, STYLE 1
(TO–226AC)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD101LT1 = 4M
Symbol
VR
PF
TJ
Tstg
MBD101 MMBD101LT1
Value
7.0
Unit
Volts
280 225
2.2 1.8
+150
– 55 to +150
mW
mW/°C
°C
°C
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Reverse Breakdown Voltage
(IR = 10 µAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
Forward Voltage(1)
(IF = 10 mAdc)
Reverse Leakage
(VR = 3.0 Vdc)
V(BR)R
CT
VF
IR
7.0
10 —
0.88 1.0
0.5 0.6
0.02 0.25
NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk.
Unit
Volts
pF
Volts
µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Berquist Company.
©MMoototorroollaa, ISncm. 1a9l9l–7Signal Transistors, FETs and Diodes Device Data
1

MMBD101
MBD101 MMBD101LT1
TYPICAL CHARACTERISTICS
(TA = 25°C unless noted)
1.0
0.7
0.5
VR = 3.0 Vdc
0.2
100
TA = 85°C
10
0.1
0.07
TA = –40°C
0.05 1.0
TA = 25°C
0.02
0.01
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
0.1
0.3
0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0 11
10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
9.0 (TEST CIRCUIT IN FIGURE 5)
0.9
8.0
7.0
0.8 6.0
5.0
4.0
0.7
3.0
2.0
0.6 0
1.0
1.0 2.0 3.0 4.0
0.1 0.2
0.5 1.0 2.0
5.0 10
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CC and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local
oscillator (LO) frequency of 1.0 GHz. The LO power
is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f =
30 MHz, see Figure 5.
Note 3 — LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD101/D Schott ky Barrier Diodes • Low Noise Figure — 6.0 dB Typ @ 1.0 GHz Designed prim arily for UHF mixer applications but su itable also for use in detector and ult ra–fast switching circuits. Supplied in an inexpensive plastic package for l ow–cost, high–volume consumer requi rements. Also available in Surface Moun t package. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • High Forward Conductance — 0.5 Volts (Typ ) @ IF = 10 mA MBD101 MMBD101LT1 Motor ola Preferred Devices SILICON SCHOTTKY BARRIER DIODES 2 CATHODE 1 ANODE 1 2 3 CATHODE 1 ANODE CASE 182– 02, S TYLE 1 (TO–226AC) 3 MAXIMUM RATINGS MBD101 Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate a bove 25°C Junction Temperature Storage Temperature Range Symbol VR PF 280 2.2 TJ Tstg +150 – 55 to +150 225 1.8 mW mW/°C °C °C MMBD101LT1 Value 7.0 Un it Volts CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) 1 2 DEVICE MARKING MMBD101LT1 = 4M EL.
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