MMBD110T1 Barrier Diodes Datasheet

MMBD110T1 Datasheet, PDF, Equivalent


Part Number

MMBD110T1

Description

Schottky Barrier Diodes

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBD110T1 Datasheet


MMBD110T1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high–efficiency UHF and
VHF detector applications. Readily available to many other fast switching RF
and digital applications. They are housed in the SOT–323/SC–70 package
which is designed for low–power surface mount applications.
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
Order this document
BY MMBD110T1/D
MMBD110T1
MMBD330T1
MMBD770T1
3
1
2
CASE 419A–02, STYLE 2
SOT-323/SC–70
MAXIMUM RATINGS
Reverse Voltage
Rating
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD110T1 = 4M
MMBD330T1 = 4T
MMBD770T1 = 5H
MMBD110T1
MMBD330T1
MMBD770T1
Symbol
VR
PF
TJ
Tstg
Value
7.0
30
70
120
– 55 to +125
– 55 to +150
Unit
Vdc
mW
°C
°C
Thermal Clad is a registered trademark of the Bergquist Company.
©MMotootorroollaa, SInmc. 1a9ll96Signal Transistors, FETs and Diodes Device Data
1

MMBD110T1
MMBD110T1 MMBD330T1 MMBD770T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage
(IR = 10 µA)
MMBD110T1
MMBD330T1
MMBD770T1
V(BR)R
7.0
30
70
10
Volts
Diode Capacitance
(VR = 0, f = 1.0 MHZ, Note 1)
(VR = 15 Volts, f = 1.0 MHZ)
(VR = 20 Volts, f = 1.0 MHZ)
Reverse Leakage
(VR = 3.0 V)
(VR = 25 V)
(VR = 35 V)
Noise Figure
(f = 1.0 GHz, Note 2)
MMBD110T1
MMBD330T1
MMBD770T1
MMBD110T1
MMBD330T1
MMBD770T1
MMBD110T1
CT pF
— 0.88 1.0
— 0.9 1.5
— 0.5 1.0
IR nAdc
— 20 250
— 13 200
— 9.0 200
NF dB
— 6.0 —
Forward Voltage
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
MMBD110T1
MMBD330T1
MMBD770T1
VF Vdc
— 0.5 0.6
— 0.38 0.45
— 0.52 0.6
— 0.42 0.5
— 0.7 1.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document BY MMBD110T1/D Sch ottky Barrier Diodes Schottky barrier d iodes are designed primarily for high efficiency UHF and VHF detector applic ations. Readily available to many other fast switching RF and digital applicat ions. They are housed in the SOT–323/ SC–70 package which is designed for l ow–power surface mount applications. • Extremely Low Minority Carrier Life time • Very Low Capacitance • Low R everse Leakage • Available in 8 mm Ta pe and Reel MMBD110T1 MMBD330T1 MMBD77 0T1 3 1 2 CASE 419A–02, STYLE 2 SOT -323/SC–70 MAXIMUM RATINGS Rating Re verse Voltage MMBD110T1 MMBD330T1 MMBD7 70T1 Symbol VR Value 7.0 30 70 120 – 55 to +125 – 55 to +150 Unit Vdc For ward Power Dissipation TA = 25°C Junct ion Temperature Storage Temperature Ran ge PF TJ Tstg mW °C °C DEVICE MARK ING MMBD110T1 = 4M MMBD330T1 = 4T MMBD7 70T1 = 5H Thermal Clad is a registered trademark of the Bergquist Company. Motorola Transistors, FETs and Diodes Device Data © .
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