Signal Diodes. MMBD1203 Datasheet


MMBD1203 Diodes. Datasheet pdf. Equivalent


Part Number

MMBD1203

Description

Small Signal Diodes

Manufacture

Fairchild

Total Page 7 Pages
Datasheet
Download MMBD1203 Datasheet


MMBD1203
July 2015
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 /
MMBD1205
Small Signal Diodes
Connection Diagram
1201 3
3 1202
3
1 2NC
1NC 2
1203 3
3 1204
1
SOT-23
2
12
12
1205 3
12
Ordering Information
Part Number
MMBD1201
MMBD1202
MMBD1203
MMBD1204
MMBD1205
Top Mark
24
25
26
27
28
Package
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward Pulse Width = 1.0 second
Surge Current
Pulse Width = 1.0 microsecond
100
200
1.0
2.0
V
mA
A
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
-55 to +150
150
°C
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2001 Fairchild Semiconductor Corporation
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Rev. 1.7
www.fairchildsemi.com

MMBD1203
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Power Dissipation
PD Derate Above 25°C
RθJA Thermal Resistance, Junction-to-Ambient
Value
350
2.8
357
Unit
mW
mW/°C
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
VR Breakdown Voltage
VF Forward Voltage
IR Reverse Current
CT Total Capacitance
trr Reverse Recovery Time
IR = 100 μA
IF = 1.0 mA
IF = 10 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
VR = 20 V
VR = 50 V
VR = 50 V, TA = 150°C
VR = 0, f = 1.0 MHz
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω
Min.
100
550
660
820
0.87
Max.
600
740
920
1.0
1.1
25
50
100
2.0
4.0
Unit
V
mV
mV
mV
V
V
nA
nA
μA
pF
nS
© 2001 Fairchild Semiconductor Corporation
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Rev. 1.7
2
www.fairchildsemi.com


Features MMBD1201 / 1203 / 1204 / 1205 Discrete POWER & Signal Technologies MMBD1201 / 1203 / 1204 / 1205 CONNECTION DIAGRAMS 3 1201 3 3 1203 3 24 1 2 NC 3 1 3 2 2 1 2 1204 1205 SOT-23 1 M ARKING MMBD1201 24 MMBD1204A 27 MMBD120 3 26 MMBD1205A 28 1 2 1 2 High Con ductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Curre nt DC Forward Current Recurrent Peak Fo rward Current TA = 25°C unless otherw ise noted Parameter Value 50 200 600 700 1.0 2.0 -55 to +150 150 Units V mA mA mA A A °C °C Tstg TJ Peak Forwa rd Surge Current Pulse width = 1.0 seco nd Pulse width = 1.0 microsecond Storag e Temperature Range Operating Junction Temperature *These ratings are limitin g values above which the serviceability of any semiconductor device may be imp aired. NOTES: 1) These ratings are base d on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory shoul.
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