Switching Diodes. MMBD2836LT1 Datasheet


MMBD2836LT1 Diodes. Datasheet pdf. Equivalent


MMBD2836LT1


Monolithic Dual Switching Diodes
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MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes
Features

• Pb−Free Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current MMBD2835LT1 MMBD2836LT1 Symbol VR IF Value 35 75 100 Unit Vdc mAdc

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ANODE 3

CATHODE 1 2 CATHODE

THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD 225 mW
1 2 3

1.8 RqJA PD 556 300

mW/°C °C/W mW

SOT− 23 (TO −236AB) CASE 318 −08 STYLE 12

2.4 RqJA TJ, Tstg 417 −55 to +150

mW/°C °C/W °C

MARKING DIAGRAM

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

xxx M G G 1

xxx

= Specific Device Code A3X = MMBD2835LT1 A2X = MMBD2836LT1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)

ORDERING INFORMATION
Device MMBD2835LT1 MMBD2835LT1G MMBD2836LT...



MMBD2836LT1
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MMBD2835LT1,
MMBD2836LT1
Monolithic Dual Switching
Diodes
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
VR
35 Vdc
75
Forward Current
THERMAL CHARACTERISTICS
IF 100 mAdc
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
Junction and Storage Temperature
TJ, Tstg
417
−55 to
+150
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
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ANODE
3
CATHODE
1
2
CATHODE
3
1
2
SOT− 23 (TO −236AB)
CASE 318 −08
STYLE 12
MARKING DIAGRAM
xxx M G
G
1
xxx = Specific Device Code
A3X = MMBD2835LT1
A2X = MMBD2836LT1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 4
ORDERING INFORMATION
Device
Package
Shipping
MMBD2835LT1 SOT−23 3000 / Tape & Reel
MMBD2835LT1G
MMBD2836LT1
SOT−23 3000 / Tape & Reel
(Pb−Free)
SOT−23 3000 / Tape & Reel
MMBD2836LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
MMBD2835LT1/D

MMBD2836LT1
MMBD2835LT1, MMBD2836LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 mAdc)
MMBD2835LT1
MMBD2836LT1
V(BR)
35
75
− Vdc
Reverse Voltage Leakage Current (Note 3)
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2835LT1
MMBD2836LT1
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
3. For each individual diode while the second diode is unbiased.
IR
CT
VF
trr
− nAdc
− 100
100
− 4.0 pF
− 1.0 Vdc
− 1.0
− 1.2
− 4.0 ns
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
DUT
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2




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