MMBD451LT1 Barrier Diodes Datasheet

MMBD451LT1 Datasheet, PDF, Equivalent


Part Number

MMBD451LT1

Description

Schottky Barrier Diodes

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBD451LT1 Datasheet


MMBD451LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD451LT1/D
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Extremely Fast Switching Speed
Extremely Low Forward Voltage — 0.28 Volts (Typ) @ IF = 10 mAdc
MMBD451LT1
Motorola Preferred Device
20 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODE
3
CATHODE
2
ANODE
3
1
2
CASE 419 – 02, STYLE 2
SOT– 323 (SC – 70)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Peak Reverse Voltage
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VRM
VR
PF
Operating Junction
Temperature Range
TJ
Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Total Capacitance
(VR = 100 V, f = 1.0 MHz)
Reverse Current
(VR = 10 V)
Forward Voltage
(IF = 10 mAdc)
(IF = 100 mAdc)
CT
IR
VF
Value
20
10
200
1.6
– 55 to +150
– 55 to +150
Min Typ
— 6.0
— 1.0
— 0.28
— 0.45
Unit
Volts
Volts
mW
mW/°C
°C
°C
Max Unit
— pF
30 mAdc
Vdc
0.34
0.55
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

MMBD451LT1
MMBD451LT1
+10 V
820
2k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
IF
trr t
50 OUTPUT
PULSE
GENERATOR
DUT
50 INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD451LT1/D Sc hottky Barrier Diode These Schottky bar rier diodes are designed for high speed switching applications, circuit protec tion, and voltage clamping. Extremely l ow forward voltage reduces conduction l oss. Miniature surface mount package is excellent for hand held and portable a pplications where space is limited. • Extremely Fast Switching Speed • Ext remely Low Forward Voltage — 0.28 Vol ts (Typ) @ IF = 10 mAdc MMBD451LT1 Mot orola Preferred Device 20 VOLT SCHOTTK Y BARRIER DETECTOR AND SWITCHING DIODE 3 CATHODE 2 ANODE 1 2 3 CASE 419 02, STYLE 2 SOT– 323 (SC – 70) M AXIMUM RATINGS (TJ = 125°C unless othe rwise noted) Rating Peak Reverse Voltag e Reverse Voltage Forward Power Dissipa tion @ TA = 25°C Derate above 25°C Op erating Junction Temperature Range Stor age Temperature Range Symbol VRM VR PF 200 1.6 TJ – 55 to +150 Tstg – 55 t o +150 °C mW mW/°C °C Value 20 10 Unit Volts Volts ELECTRICAL CHARACTERISTICS (TA.
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