Switching Diode. MMBD6050LT1 Datasheet


MMBD6050LT1 Diode. Datasheet pdf. Equivalent


MMBD6050LT1


Switching Diode
MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMBD6050LT1/D

Switching Diode

MMBD6050LT1

3

3 CATHODE

1 ANODE

1 2

MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc

CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBD6050LT1 = 5AM

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR VF 0.55 0.85 trr C — — 0.7 1.1 4.0 2.5 ns pF 70 — — 0.1 Vdc µAdc Vdc



 0.062 in.   0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device D...



MMBD6050LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Switching Diode
Order this document
by MMBD6050LT1/D
MMBD6050LT1
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD6050LT1 = 5AM
Symbol
VR
IF
IFM(surge)
Value
70
200
500
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
Capacitance (VR = 0 V)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)
IR
VF
trr
C
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Min Max Unit
70 — Vdc
— 0.1 µAdc
Vdc
0.55 0.7
0.85 1.1
— 4.0 ns
— 2.5 pF
Thermal Clad is a trademark of the Bergquist Company
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1

MMBD6050LT1
MMBD6050LT1
820
+10 V
2.0 k
100 µH
0.1 µF
IF
50 OUTPUT
PULSE
GENERATOR
DUT
0.1 µF
tr tp
10%
t
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
100
10
1.0
0.1
0.2
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = 85°C
TA = –40°C
10
1.0
TA = 150°C
TA = 125°C
TA = 25°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.2
0.1
0.01
0.001
0
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2.0 4.0 6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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