MMBD914LT1 Switching Diode Datasheet

MMBD914LT1 Datasheet, PDF, Equivalent


Part Number

MMBD914LT1

Description

High-Speed Switching Diode

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBD914LT1 Datasheet


MMBD914LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD914LT1/D
High-Speed Switching Diode
3
CATHODE
1
ANODE
MMBD914LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD914LT1 = 5D
Symbol
VR
IF
IFM(surge)
Value
100
200
500
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)
IR
CT
VF
trr
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Min Max Unit
100 — Vdc
— 25 nAdc
— 5.0 mAdc
— 4.0 pF
— 1.0 Vdc
— 4.0 ns
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1

MMBD914LT1
MMBD914LT1
820
+10 V
2.0 k
100 µH
0.1 µF
IF
50 OUTPUT
PULSE
GENERATOR
DUT
0.1 µF
tr tp
10%
t
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
100
10
1.0
0.1
0.2
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = 85°C
TA = –40°C
10
1.0
TA = 150°C
TA = 125°C
TA = 25°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.2
0.1
0.01
0.001
0
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2.0 4.0 6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD914LT1/D Hi gh-Speed Switching Diode 3 CATHODE 1 AN ODE MMBD914LT1 Motorola Preferred Devi ce 3 1 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward S urge Current Symbol VR IF IFM(surge) Va lue 100 200 500 Unit Vdc mAdc mAdc 2 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Cha racteristic Total Device Dissipation FR – 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to A mbient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to A mbient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Un it mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBD914LT1 = 5D ELECTR ICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reve rse Breakdown Voltage (IR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc).
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