MMBF170LT1 FET Transistor Datasheet

MMBF170LT1 Datasheet, PDF, Equivalent


Part Number

MMBF170LT1

Description

TMOS FET Transistor

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBF170LT1 Datasheet


MMBF170LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF170LT1/D
TMOS FET Transistor
N–Channel
DRAIN
3
MMBF170LT1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
— Continuous
m— Non–repetitive (tp 50 s)
Drain Current – Continuous
Pulsed
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBF170LT1 = 6Z
1
GATE
®
2
SOURCE
Symbol
VDSS
VDGS
VGS
VGSM
ID
IDM
Value
60
60
± 20
± 40
0.5
0.8
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Symbol
PD
RqJA
TJ, Tstg
Max
225
1.8
556
– 55 to +150
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
mDrain–Source Breakdown Voltage (VGS = 0, ID = 100 A)
Gate–Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS (2)
V(BR)DSS
IGSS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 200 mA)
On–State Drain Current (VDS = 25 Vdc, VGS = 0)
VGS(th)
rDS(on)
ID(off)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Ciss
Turn–On Delay Time
Turn–Off Delay Time
W(VDD = 25 Vdc, ID = 500 mA, Rgen = 50 )
Figure 1
 1. FR– 5 = 1.0 0.75 0.062 in.
v vm2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
td(on)
td(off)
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
REV 2
3
1
2
CASE 318 – 08, STYLE 21
SOT– 23 (TO – 236AB)
Min Max Unit
60 — Vdc
— 10 nAdc
0.8 3.0 Vdc
— 5.0 W
— 0.5 mA
— 60 pF
— 10 ns
— 10
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBF170LT1
MMBF170LT1
+25 V
PULSE
GENERATOR
50 W
125 W
Vin
40 pF
50 W 1 MW
20 dB 50 W
ATTENUATOR
TO SAMPLING
SCOPE
50 W INPUT
Vout
ton
td(on)
OUTPUT
INVERTED
Vout
INPUT
10%
Vin
(Vin AMPLITUDE 10 VOLTS)
tr td(off)
90%
10%
50%
PULSE WIDTH
toff
tf
90%
90%
50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
2.0
1.8 TA = 25°C
1.6
1.4
VGS = 10 V
9V
1.2 8 V
1.0
7V
0.8
0.6 6 V
0.4 5 V
0.2 4 V
3V
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 3. Ohmic Region
1.0
VDS = 10 V
0.8
0.6
0.4
0.2
– 55°C
25°C
125°C
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
2.4
2.2
2.0 VGS = 10 V
ID = 200 mA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
– 60
– 20
+ 20 + 60
T, TEMPERATURE (°C)
+ 100
Figure 5. Temperature versus Static
Drain–Source On–Resistance
+ 140
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
– 60
VDS = VGS
ID = 1.0 mA
– 20 + 20 + 60 + 100
T, TEMPERATURE (°C)
Figure 6. Temperature versus Gate
Threshold Voltage
+ 140
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF170LT1/D TM OS FET Transistor N–Channel ® 1 GATE DRAIN 3 MMBF170LT1 2 SOURCE 3 1 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Sou rce Voltage — Continuous — Non–re petitive (tp ≤ 50 ms) Drain Current Continuous Pulsed Symbol VDSS VDGS V GS VGSM ID IDM Value 60 60 ± 20 ± 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc CASE 318 – 08, STYLE 21 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Charact eristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25° C Thermal Resistance, Junction to Ambie nt Junction and Storage Temperature Sym bol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBF170LT1 = 6Z ELECTRI CAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain –Source Breakdown Voltage (VGS = 0, I D = 100 mA) Gate–Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IGSS 60 — — 10 Vdc nA.
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