MMBF2201NT1 TMOS MOSFET Datasheet

MMBF2201NT1 Datasheet, PDF, Equivalent


Part Number

MMBF2201NT1

Description

N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBF2201NT1 Datasheet


MMBF2201NT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF2201NT1/D
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
Part of the GreenLinePortfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life 1
Miniature SC–70/ SOT– 323 Surface Mount Package Saves
GATE
Board Space
3 DRAIN
2 SOURCE
MMBF2201NT1
Motorola Preferred Device
N – CHANNEL
ENHANCEMENT– MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
CASE 419–02, Style 7
SC–70/SOT–323
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF2201NT1
78 mm embossed tape
3000
MMBF2201NT3
138 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMotootorroollaa, SInmc. 1a9ll95Signal Transistors, FETs and Diodes Device Data
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
Unit
20 Vdc
± 20 Vdc
300 mAdc
240
750
150 mW
1.2 mW/°C
– 55 to 150 °C
833 °C/W
260 °C
1

MMBF2201NT1
MMBF2201NT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 )
Fall Time
Gate Charge (See Figure 5)
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
1.0
Typ Max Unit
— — Vdc
µAdc
— 1.0
— 10
±100
nAdc
1.7 2.4 Vdc
Ohms
0.75 1.0
1.0 1.4
450 — mMhos
45 — pF
25 —
5.0 —
2.5
2.5
15
0.8
1400
ns
pC
— 0.3
— 0.75
0.85 —
A
V
TYPICAL CHARACTERISTICS
1.0
0.9
0.8 VGS = 4 V
0.7
0.6
0.5 VGS = 3.5 V
0.4
0.3 VGS = 3 V
0.2
0.1 VGS = 2.5 V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 1. Typical Drain Characteristics
1.6
1.4
1.2
VGS = 4.5 V
1.0
ID = 100 mA
0.8
0.6
0.4
VGS = 10 V
ID = 300 mA
0.2
0
– 60 – 40 – 20 0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 2. On Resistance versus Temperature
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF2201NT1/ D MMBF2201NT1 Motorola Preferred Devic e Low rDS(on) Small-Signal MOSFETs TMO S Single N-Channel Field Effect Transis tors Part of the GreenLine™ Portfolio of devices with energy–conserving tr aits. These miniature surface mount MOS FETs utilize Motorola’s High Cell Den sity, HDTMOS process. Low rDS(on) assur es minimal power loss and conserves ene rgy, making this device ideal for use i n small power management circuitry. Typ ical applications are dc–dc converter s, power management in portable and bat tery– powered products such as comput ers, printers, PCMCIA cards, cellular a nd cordless telephones. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life 1 GATE • Miniature SC 70/ SOT– 323 Surface Mount Package S aves Board Space 2 SOURCE N – CHANNE L ENHANCEMENT– MODE TMOS MOSFET rDS(o n) = 1.0 OHM ™ 3 DRAIN CASE 419– 02, Style 7 SC–70/SOT–323 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–.
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