Switching Transistors. MMBF4391LT1 Datasheet
JFET Switching Transistors
|Total Page||6 Pages|
JFET Switching Transistors
• Pb−Free Packages are Available
VDS 30 Vdc
Forward Gate Current
IG(f) 50 mAdc
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient RqJA
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
6x M G
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
6x = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBF4391LT1, MMBF4392LT1, MMBF4393LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Gate−Source Breakdown Voltage
(IG = 1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
Gate−Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Off−State Drain Current
(VDS = 15 Vdc, VGS = −12 Vdc)
(VDS = 15 Vdc, VGS = −12 Vdc, TA = 100°C)
Zero−Gate−Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
(ID = 12 mAdc, VGS = 0)
(ID = 6.0 mAdc, VGS = 0)
(ID = 3.0 mAdc, VGS = 0)
Static Drain−Source On−Resistance
(ID = 1.0 mAdc, VGS = 0)
SMALL− SIGNAL CHARACTERISTICS
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 12 Vdc, f = 1.0 MHz)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
|Features||www.DataSheet4U.com MMBF4391LT1, MMBF43 92LT1, MMBF4393LT1 JFET Switching Trans istors N−Channel http://onsemi.com Fe atures 2 SOURCE • Pb−Free Packages are Available MAXIMUM RATINGS Rating D rain−Source Voltage Drain−Gate Volt age Gate−Source Voltage Forward Gate Current Symbol VDS VDG VGS IG(f) Value 30 30 30 50 Unit Vdc Vdc Vdc mAdc 1 3 G ATE 1 DRAIN 3 THERMAL CHARACTERISTIC S Characteristic Total Device Dissipati on FR− 5 Board (Note 1) TA = 25°C De rate above 25°C Thermal Resistance, Ju nction−to−Ambient Junction and Stor age Temperature Range Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55 to +150 mW mW/ °C °C/W °C Max Unit 2 SOT−23 CAS E 318 STYLE 10 Maximum ratings are tho se values beyond which device damage ca n occur. Maximum ratings applied to the device are individual stress limit val ues (not normal operating conditions) a nd are not valid simultaneously. If the se limits are exceeded, device function al operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.|
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