Transistor. MMBF5457LT1 Datasheet

MMBF5457LT1 Transistor. Datasheet pdf. Equivalent


Part Number

MMBF5457LT1

Description

JFET - General Purpose Transistor

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBF5457LT1 Datasheet


MMBF5457LT1
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MMBF5457LT1
Preferred Device
JFET − General Purpose
Transistor
N−Channel
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
Drain−Gate Voltage
Reverse Gate−Source Voltage
Gate Current
THERMAL CHARACTERISTICS
VDS
VDG
VGS(r)
IG
25 Vdc
25 Vdc
−25 Vdc
10 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
(TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
3
GATE
2 SOURCE
1 DRAIN
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
6MG
G
1
6 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBF5457LT1
SOT−23 3000/Tape & Reel
MMBF5457LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 4
1
Publication Order Number:
MMBF5457LT1/D

MMBF5457LT1
MMBF5457LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 10 mAdc, VDS = 0)
V(BR)GSS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
IGSS
VGS(off)
Gate Source Voltage
(VDS = 15 Vdc, ID = 100 mAdc)
VGS
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 2)
(VDS = 15 Vdc, VGS = 0)
IDSS
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance (Note 2)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
Output Common Source Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos|
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%.
Crss
Min
−25
−0.5
1.0
1000
Typ
− 2.5
10
4.5
1.5
Max Unit
− Vdc
−1.0
−200
− 6.0
nAdc
Vdc
− Vdc
5.0 mAdc
5000 mmhos
50 mmhos
7.0 pF
3.0 pF
http://onsemi.com
2


Features www.DataSheet4U.com MMBF5457LT1 Preferr ed Device JFET − General Purpose Tra nsistor N−Channel Features http://ons emi.com • Pb−Free Package is Avail able 2 SOURCE MAXIMUM RATINGS Rating D rain−Source Voltage Drain−Gate Volt age Reverse Gate−Source Voltage Gate Current Symbol VDS VDG VGS(r) IG Value 25 25 −25 10 Unit Vdc Vdc Vdc mAdc 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipatio n FR− 5 Board (Note 1) (TA = 25°C De rate above 25°C Thermal Resistance, Ju nction−to−Ambient Junction and Stor age Temperature Symbol PD Max 225 1.8 R qJA TJ, Tstg 556 −55 to +150 Unit 1 3 mW mW/°C °C/W °C SOT−23 (TO− 236) CASE 318 STYLE 10 2 MARKING DIAG RAM Maximum ratings are those values b eyond which device damage can occur. Ma ximum ratings applied to the device are individual stress limit values (not no rmal operating conditions) and are not valid simultaneously. If these limits a re exceeded, device functional operation is not implied, damage may occur and reliability may be.
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