JFET Chopper. MMBFJ175LT1 Datasheet


MMBFJ175LT1 Chopper. Datasheet pdf. Equivalent


Part Number

MMBFJ175LT1

Description

JFET Chopper

Manufacture

ON

Total Page 2 Pages
Datasheet
Download MMBFJ175LT1 Datasheet


MMBFJ175LT1
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MMBFJ175LT1
Preferred Device
JFET Chopper
P−Channel − Depletion
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Drain−Gate Voltage
Reverse Gate−Source Voltage
THERMAL CHARACTERISTICS
Symbol
VDG
VGS(r)
Value
25
−25
Unit
V
V
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(VDS = 0, ID = 1.0 mA)
Gate Reverse Current
(VDS = 0 V, VGS = 20 V)
V(BR)GSS 30
IGSS
− 1.0
V
nA
Gate −Source Cutoff Voltage
(VDS = 15, ID = 10 nA)
VGS(OFF) 3.0 6.0
V
ON CHARACTERISTICS
Zero Gate−Voltage Drain Current (Note 2)
(VGS = 0, VDS = 15 V)
IDSS
7.0 60
mA
Drain Cutoff Current
(VDS = 15 V, VGS = 10 V)
ID(off)
− 1.0 nA
Drain Source On Resistance
(ID = 500 mA)
Input Capacitance
Reverse Transfer
Capacitance
VDS = 0, VGS = 10V
f = 1.0 MHz
rDS(on)
Ciss
Crss
− 125
− 11
− 5.5
W
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
6W M G
G
1
6W = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBFJ175LT1 SOT−23 3,000 / Tape & Reel
MMBFJ175LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBFJ175LT1/D

MMBFJ175LT1
MMBFJ175LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
SEE VIEW C
3
E HE
12
e
b
A
A1
c
0.25
q
L
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
MILLIMETERS
DIM MIN NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37
0.44
0.50
c 0.09 0.13 0.18
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e 1.78 1.90 2.04
L 0.10
0.20
0.30
L1 0.35
0.54
0.69
H E 2.10
2.40
2.64
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Email: orderlit@onsemi.com
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USA/Canada
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
2
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MMBFJ175LT1/D


Features www.DataSheet4U.com MMBFJ175LT1 Preferr ed Device JFET Chopper P−Channel − Depletion Features • Pb−Free Pack age is Available MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−So urce Voltage Symbol VDG VGS(r) Value 25 −25 Unit V V http://onsemi.com 2 SO URCE 3 GATE THERMAL CHARACTERISTICS Ch aracteristic Total Device Dissipation F R−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Juncti on−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C 1 2 3 Max Unit 1 DRAIN SOT−23 ( TO−236) CASE 318 STYLE 10 Maximum ra tings are those values beyond which dev ice damage can occur. Maximum ratings a pplied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultane ously. If these limits are exceeded, de vice functional operation is not implie d, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (T.
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