MMBR901LT1 High-Frequency Transistor Datasheet

MMBR901LT1 Datasheet, PDF, Equivalent


Part Number

MMBR901LT1

Description

NPN Silicon High-Frequency Transistor

Manufacture

Motorola

Total Page 16 Pages
Datasheet
Download MMBR901LT1 Datasheet


MMBR901LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR901LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high–gain, low–noise small–signal amplifiers for
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
High Current–Gain — Bandwidth Product
Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 1.8 dB (Typ) (MRF9011LT1)
NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3)
High Power Gain —
Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
Guaranteed RF Parameters (MRF9011LT1)
Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance
Lower Package Parasitics
High Gain
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
MMBR901LT1, T3
MPS901 MRF901
MRF9011LT1
IC = 30 mA
SURFACE MOUNTED
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE, MMBR901LT1, T3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
Collector–Base Voltage
VCBO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
Power Dissipation @ TC = 75°C (1)
MMBR901LT1, T3; PD(max)
MRF9011LT1
Derate above 25°C
15
25
2.0
30
0.300
4.00
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
MPS901
PD 300 mW
4.0 mW/°C
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
MRF901
PD
0.375
Watt
5.0 mW/°C
Storage Temperature Range All
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Tstg – 55 to +150
TJ(max)
150
°C
°C
Symbol
Max
Unit
Storage Temperature
Thermal Resistance, Junction to Case
MRF901
MRF9011LT1, MMBR901LT1, T3
Tstg
RθJC
150 °C
°C/W
200
250
DEVICE MARKING
MRF9011LT1 = 01
MMBR901LT1, T3 = 7A
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
CASE 29–04, STYLE 2
TO–226AA (TO–92)
MPS901
CASE 317–01, STYLE 2
MRF901
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE, MRF9011LT1
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MMBR901LT1, T3 MPS901 MRF901 MRF9011LT1
1

MMBR901LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
V(BR)CEO
15
V(BR)CBO
25
V(BR)EBO 2.0
ICBO
— Vdc
— Vdc
— Vdc
50 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 5.0 Vdc)
MMBR901LT1, T3
MRF9011LT1, MPS901, MRF901
hFE
50 — 200 —
30 80 200
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 15 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MRF9011LT1
MPS901, MRF901
MRF9011LT1
MPS901
MRF901
fT — 3.8 — GHz
— 4.5 —
Ccb
— 0.55 1.0
pF
— 0.50 1.0
— 0.40 1.0
FUNCTIONAL TESTS
Power Gain at Minimum Noise Figure
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
Minimum Noise Figure (Figure 3)
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
Insertion Gain in 50 System
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
Minimum Noise Figure (Figure 3)
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
Minimum Noise Figure (Figure 3)
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 900 MHz)
Minimum Noise Figure (Figure 3)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1.0 GHz)
MRF9011LT1
MRF9011LT1
MRF9011LT1
MMBR901LT1, T3
MPS901
MRF901
GNFmin
NFmin
S212
NFmin
9.0
13.5
1.8
10.2
1.9
NFmin
2.4
NFmin
2.0
2.5
dB
dB
dB
dB
dB
dB
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
Common–Emitter Amplifier Gain
(VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
MMBR901LT1
MMBR901LT1
Cobo — — 1.0 pF
Gpe — 12 — dB
MMBR901LT1, T3 MPS901 MRF901 MRF9011LT1
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this document by MMBR901LT1/D The RF Line NPN Silicon High-Frequency Tra nsistor Designed primarily for use in h igh–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current Gain — Bandwidth Product • Low No ise Figure @ f = 1.0 GHz — NF(matched ) = 1.8 dB (Typ) (MRF9011LT1) NF(matche d) = 1.9 dB (Typ) (MMBR901LT1, T3) • High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gp e(matched) = 12.0 dB (Typ) @ f = 1.0 GH z (MMBR901LT1, T3) • Guaranteed RF Pa rameters (MRF9011LT1) • Surface Mount ed SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics High Gain • Available in tape and re el packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 unit s per reel MMBR901LT1, T3 MPS901 MRF90 1 MRF9011LT1 IC = 30 mA SURFACE MOUNTED HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 318–08, STYLE 6.
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