MMBT2222 Si-Epitaxial PlanarTransistors Datasheet

MMBT2222 Datasheet, PDF, Equivalent


Part Number

MMBT2222

Description

Surface mount Si-Epitaxial PlanarTransistors

Manufacture

Diotec

Total Page 2 Pages
Datasheet
Download MMBT2222 Datasheet


MMBT2222
MMBT2222 / MMBT2222A
MMBT2222 / MMBT2222A
NPN
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
Version 2006-05-15
2.9 ±0.1
0.4 3
Type
Code
1
2
1.1
1.9
Dimensions - Maße [mm]
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBT2222 MMBT2222A
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO
30 V
40 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
60 V
75 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
5V
6V
Power dissipation – Verlustleistung
Ptot 250 mW 1)
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IC 600 mA
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.1 mA,
IC = 1 mA,
IC = 10 mA,
IC = 150 mA,
IC = 500 mA,
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V 2)
MMBT2222
MMBT2222A
h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA
Small signal current gain
Kleinsignal-Stromverstärkung
MMBT2222
MMBT2222A
Input impedance – Eingangs-Impedanz
MMBT2222
MMBT2222A
Output admittance – Ausgangs-Leitwert
MMBT2222
MMBT2222A
hFE
hFE
hFE
hFE
hFE
hFE
hfe
hfe
hie
hie
hoe
hoe
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
35 –
50 –
75 –
100 – 300
30 –
40 –
50 – 300
75 – 375
2 k– 8 k
0.25 k– 1.25 k
5 µS
25 µS
– 35 µS
– 200 µS
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1

MMBT2222
MMBT2222 / MMBT2222A
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
MMBT2222
MMBT2222A
VCEsat
VCEsat
IC = 500 mA, IB = 50 mA
MMBT2222
MMBT2222A
VCEsat
VCEsat
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
VBEsat
VBEsat
VBEsat
VBEsat
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 50 V, (E open)
VCB = 60 V, (E open)
MMBT2222
MMBT2222A
ICBO
ICBO
VCB = 50 V, Tj = 125°C, (E open)
VCB = 60 V, Tj = 125°C, (E open)
MMBT2222
MMBT2222A
ICBO
ICBO
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 3 V, (C open)
MMBT2222A IEB0
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 20 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
Noise figure – Rauschzahl
VCE = 10 V, IC = 100 µA, RG = 1 k, f = 1 kHz MMBT2222A F
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
VCC = 3 V, VBE = 0.5 V
IC = 150 mA, IB1 = 15mA
td
tr
storage time
fall time
VCC = 3 V, IC = 150 mA,
IB1 = IB2 = 15 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
ts
tf
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
Min.
Typ.
Max.
– – 0.4 V
– – 0.3 V
– – 1.6 V
– – 1.0 V
0.65 V
1.3 V
1.2 V
2.6 V
2.0 V
– – 10 nA
– – 10 nA
– – 10 µA
– – 10 µA
– –- 100 nA
250 MHz
– – 8 pF
– – 25 pf
– – 4 dB
– – 10 ns
– – 25 ns
– – 225 ns
– – 60 ns
< 420 K/W 1)
MMBT2709 / MMBT2709A
MMBT2222 = 1B
MMBT2222A = M1P
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG


Features .
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