MMBT2222A NPN TRANSISTOR Datasheet

MMBT2222A Datasheet, PDF, Equivalent


Part Number

MMBT2222A

Description

SMALL SIGNAL NPN TRANSISTOR

Manufacture

STMicroelectronics

Total Page 5 Pages
Datasheet
Download MMBT2222A Datasheet


MMBT2222A
® MMBT2222A
Type
MMBT2222A
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Marking
M22
s SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
s MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
s TAPE & REEL PACKING
s THE PNP COMPLEMENTARY TYPE IS
MMBT2907A
APPLICATIONS
s WELL SUITABLE FOR PORTABLE
EQUIPMENT
s SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Total Dissipation at Tamb = 25 oC
Storage Temperature
Max. Operating Junction Temperature
February 2003
Value
75
40
6
0.6
0.8
350
-65 to 150
150
Unit
V
V
V
A
A
mW
oC
oC
1/5

MMBT2222A
MMBT2222A
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Device mounted on a PCB area of 1 cm2 .
Max
357.1
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX
IBEX
ICBO
Collector Cut-off
Current (VBE = -3 V)
Base Cut-off Current
(VBE = -3 V)
Collector Cut-off
Current (IE = 0)
VCE = 60 V
VCE = 60 V
VCB = 75 V
VCB = 75 V
Tj = 150 oC
IEBO
Emitter Cut-off Current
(IC = 0)
V(BR)CEOCollector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 3 V
IC = 10 mA
IC = 10 µA
IE = 10 µA
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
VBE(sat)Collector-Base
Saturation Voltage
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
hFEDC Current Gain
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 150 mA
IC = 150 mA
IC = 500 mA
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 1 V
VCE = 10 V
fT Transition Frequency IC = 20 mA VCE = 20V f = 100MHz
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 1MHz
NF Noise Figure
hieInput Impedance
IC = 0.1 mA VCE = 10 V f = 1 KHz
f = 200 Hz RG = 1 K
VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
hreReverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
Min.
40
75
6
0.6
35
50
75
100
50
40
2
0.25
Typ.
270
4
20
4
Max.
10
20
10
10
15
0.3
1
1.2
2
300
8
25
8
1.25
8
4
Unit
nA
nA
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
pF
dB
K
K
10-4
10-4
hfeSmall Signal Current VCE = 10 V
Gain
VCE = 10 V
hoeOutput Admittance
VCE = 10 V
VCE = 10 V
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
IC = 1 mA
IC = 10 mA
IC = 1 mA
IC = 10 mA
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
50
75
5
25
300
375
35 µS
200 µS
2/5


Features ® MMBT2222A SMALL SIGNAL NPN TRANSISTO R PRELIMINARY DATA Type MMBT2222A s M arking M22 s s s SILICON EPITAXIAL P LANAR NPN TRANSISTOR MINIATURE SOT-23 P LASTIC PACKAGE FOR SURFACE MOUNTING CIR CUITS TAPE & REEL PACKING THE PNP COMPL EMENTARY TYPE IS MMBT2907A SOT-23 APPL ICATIONS WELL SUITABLE FOR PORTABLE EQU IPMENT s SMALL LOAD SWITCH TRANSISTOR W ITH HIGH GAIN AND LOW SATURATION VOLTAG E s INTERNAL SCHEMATIC DIAGRAM ABSOLU TE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter C ollector-Emitter Voltage (I E = 0) Coll ector-Emitter Voltage (I B = 0) Emitter -Base Voltage (I C = 0) Collector Curre nt Collector Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Sto rage Temperature Max. Operating Junctio n Temperature Value 75 40 6 0.6 0.8 350 -65 to 150 150 Unit V V V A A mW o o C C February 2003 1/5 MMBT2222A THER MAL DATA R thj-amb • Thermal Resistan ce Junction-Ambient 2 Max 357.1 o C /W • Device mounted on a PCB area of 1 cm . ELECTRICAL CHARACTER.
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