MMBT2222AWT1 Purpose Transistor Datasheet

MMBT2222AWT1 Datasheet, PDF, Equivalent


Part Number

MMBT2222AWT1

Description

General Purpose Transistor

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBT2222AWT1 Datasheet


MMBT2222AWT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2222AWT1/D
Preliminary Information
General Purpose Transistor
NPN Silicon
MMBT2222AWT1
Motorola Preferred Device
These transistors are designed for general purpose amplifier applica-
tions. They are housed in the SOT–323/SC–70 package which is
designed for low power surface mount applications.
COLLECTOR
3
1
BASE
3
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2222AWT1 = 1P
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
TJ, Tstg
Max
150
833
– 55 to +150
Unit
mW
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
CASE 419 – 02, STYLE 3
SOT– 323/SC – 70
Min Max Unit
40 — Vdc
75 — Vdc
6.0 — Vdc
— 20 nAdc
— 10 nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT2222AWT1
MMBT2222AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
DC Current Gain (1)
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Small – Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = – 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
HFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
Min
35
50
75
100
40
0.6
300
0.25
75
25
Max Unit
Vdc
0.3
1.0
Vdc
1.2
2.0
— MHz
8.0 pF
30 pF
1.25 k ohms
4.0 X 10– 4
375 —
200 mmhos
4.0 dB
10
ns
25
225
ns
60
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA P reliminary Information Order this docu ment by MMBT2222AWT1/D General Purpose Transistor NPN Silicon These transisto rs are designed for general purpose amp lifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount a pplications. COLLECTOR 3 MMBT2222AWT1 Motorola Preferred Device 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Co llector – Emitter Voltage Collector Base Voltage Emitter – Base Voltag e Collector Current — Continuous Symb ol VCEO VCBO VEBO IC Value 40 75 6.0 60 0 Unit Vdc Vdc Vdc mAdc CASE 419 – 0 2, STYLE 3 SOT– 323/SC – 70 THERMA L CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board TA = 2 5°C Thermal Resistance Junction to Amb ient Junction and Storage Temperature S ymbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C DEVICE MA RKING MMBT2222AWT1 = 1P ELECTRICAL CHA RACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF .
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