MMBT2369 Switching Transistor Datasheet

MMBT2369 Datasheet, PDF, Equivalent


Part Number

MMBT2369

Description

NPN Switching Transistor

Manufacture

Fairchild

Total Page 6 Pages
Datasheet
Download MMBT2369 Datasheet


MMBT2369
MMBT2369 / PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
• Sourced from process 21.
February 2008
MMBT2369
PN2369
C
E
B SOT-23
Mark: 1J
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * Ta = 25×C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
ICP
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
**Collector Current (Pulse)
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Ratings
15
40
4.5
200
400
-55 ~ 150
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.
Max.
350
2.8
125
357
Units
V
V
V
mA
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369 Rev. 1.0.0
1
www.fairchildsemi.com

MMBT2369
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = 10mA, IB = 0
IC = 10μA, VBE = 0
IC = 10μA, IE = 0
IE = 10μA, IC = 0
VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 125°C
hFE DC Current Gain *
VCE(sat)
Collector-Emitter Saturation Voltage *
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 2.0V
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 1.0mA
Cobo
Cibo
hfe
Output Capacitance
Input Capacitance
Small -Signal Current Gain
VCB = 5.0V, IE = 0, f = 1.0MHz
VEB = 0.5V, IC = 0, f = 1.0MHz
IC = 10mA, VCE = 10V, RG = 2.0kΩ,
f = 100MHz
Switching Characteristics
ts Storage Time
ton Turn-On Time
toff Turn-Off Time
IB1 = IB2 = IC = 10mA
VCC = 3.0V, IC = 10mA, IB1 = 3.0mA
VCC = 3.0V, IC = 10mA, IB1 = 3.0mA,
IB2 = 1.5mA
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
Min. Max. Units
15
40
40
4.5
0.4
30
V
V
V
V
μA
μA
40 120
20
0.25
0.7 0.85
V
V
4.0
5.0
5.0
pF
pF
13 ns
12 ns
18 ns
© 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369 Rev. 1.0.0
2
www.fairchildsemi.com


Features MMBT2369 / PN2369 — NPN Switching Tran sistor MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. February 20 08 MMBT2369 PN2369 C E B SOT-23 Mar k: 1J TO-92 1 1. Emitter 2. Base 3. Co llector Absolute Maximum Ratings * Ta = 25×C unless otherwise noted Symbol Parameter VCEO VCBO VEBO IC ICP TJ, T STG Collector-Emitter Voltage Collect or-Base Voltage Emitter-Base Voltage Collector Current - Continuous **Coll ector Current (Pulse) Operating and St orage Junction Temperature Range * Thi s ratings are limiting values above whi ch the serviceability of any semiconduc tor device may be impaired. ** Pulse Te st: Pulse Width £ 300ms, Duty Cycle £ 2.0% NOTES: 1) These rating are based on a maximum junction temperature of 15 0 degrees C. 2) These are steady limits . The factory should be consulted on ap plications involving pulsed or low duty cycle operations. Rati.
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