MMBT2484 Purpose Amplifier Datasheet

MMBT2484 Datasheet, PDF, Equivalent


Part Number

MMBT2484

Description

NPN General Purpose Amplifier

Manufacture

Fairchild

Total Page 2 Pages
Datasheet
Download MMBT2484 Datasheet


MMBT2484
Discrete POWER & Signal
Technologies
PN2484
MMBT2484
C
C
BE
TO-92
SOT-23
Mark: 1U
E
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µ to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
100
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
PN2484
625
5.0
83.3
200
*MMBT2484
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT2484
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
BVCEO
BVEBO
Collector-Emitter Breakdown
Voltage*
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 µA, IB = 0
IC = 10 mA, IE = 0
IC = 10 µA, IE = 0
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0, TA = 150°C
VEB = 5.0 V, IC = 0
60 V
60 V
5.0 V
10 nA
10 µA
10 nA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
IC = 1.0 mA, IB = 0.1 mA
IC = 1.0 mA, VCE = 5.0 V
250
800
0.35
0.95
SMALL SIGNAL CHARACTERISTICS
Cobo Output Capacitance
Cibo Input Capacitance
NF Noise Figure
*Pulse Test: Pulse Width 300 µs, Duty Cycle 3.0%
VCB =5.0 V, f = 140 kHz
VEB = 0.5 V, f = 140 kHz
IC = 10 µA, VCE = 5.0 V,
RS = 10k,f = 1.0 kHz,BW =200 Hz
6.0
6.0
3.0
V
V
pF
pF
dB


Features PN2484 / MMBT2484 Discrete POWER & Sign al Technologies PN2484 MMBT2484 C E C BE TO-92 SOT-23 Mark: 1U B NPN Ge neral Purpose Amplifier This device is designed for low noise, high gain, gene ral purpose amplifier applications at c ollector currents from 1µ to 50 mA. So urced from Process 07. See 2N5088 for c haracteristics. Absolute Maximum Ratin gs* Symbol VCEO VCBO VEBO IC TJ, Tstg C ollector-Base Voltage Emitter-Base Volt age Collector Current - Continuous TA = 25°C unless otherwise noted Paramet er Collector-Emitter Voltage Value 60 60 5.0 100 -55 to +150 Units V V V mA °C Operating and Storage Junction Tem perature Range *These ratings are limi ting values above which the serviceabil ity of any semiconductor device may be impaired. NOTES: 1) These ratings are b ased on a maximum junction temperature of 150 degrees C. 2) These are steady s tate limits. The factory should be cons ulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD R.
Keywords MMBT2484, datasheet, pdf, Fairchild, NPN, General, Purpose, Amplifier, MBT2484, BT2484, T2484, MMBT248, MMBT24, MMBT2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)