MMBT2484LT1 Noise Transistor Datasheet

MMBT2484LT1 Datasheet, PDF, Equivalent


Part Number

MMBT2484LT1

Description

Low Noise Transistor

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBT2484LT1 Datasheet


MMBT2484LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2484LT1/D
Low Noise Transistor
NPN Silicon
COLLECTOR
3
MMBT2484LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2484LT1 = 1U
Symbol
VCEO
VCBO
VEBO
IC
Value
60
60
6.0
50
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
(VCB = 45 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
60 —
Vdc
60 —
Vdc
5.0 —
— 10 nAdc
— 10 µAdc
nAdc
— 10
Thermal Clad is a trademark of the Bergquist Company.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT2484LT1
MMBT2484LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
hFE
250 —
— 800
VCE(sat)
Vdc
0.35
VBE(on)
Vdc
0.95
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz, BW = 200 Hz)
Cobo
pF
— 6.0
Cibo
pF
— 6.0
NF dB
— 3.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2484LT1/D L ow Noise Transistor NPN Silicon 1 BASE COLLECTOR 3 MMBT2484LT1 MAXIMUM RATI NGS Rating Collector – Emitter Voltag e Collector – Base Voltage Emitter Base Voltage Collector Current — Co ntinuous Symbol VCEO VCBO VEBO IC Value 60 60 6.0 50 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYL E 6 SOT– 23 (TO – 236AB) THERMAL C HARACTERISTICS Characteristic Total Dev ice Dissipation FR– 5 Board(1) TA = 2 5°C Derate above 25°C Thermal Resista nce, Junction to Ambient Total Device D issipation Alumina Substrate,(2) TA = 2 5°C Derate above 25°C Thermal Resista nce, Junction to Ambient Junction and S torage Temperature Symbol PD Max 225 1. 8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT2 484LT1 = 1U ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Ch aracteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage.
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