Purpose Transistor. MMBT2907AWT1 Datasheet


MMBT2907AWT1 Transistor. Datasheet pdf. Equivalent


MMBT2907AWT1


General Purpose Transistor
MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Preliminary Information

Order this document by MMBT2907AWT1/D

General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.
COLLECTOR 3

MMBT2907AWT1
Motorola Preferred Device

3

1 BASE 2 EMITTER

1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –60 –60 –5.0 –600 Unit Vdc Vdc Vdc mAdc

CASE 419 – 02, STYLE 3 SOT– 323/SC – 70

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C

DEVICE MARKING
MMBT2907AWT1 = 2F

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycl...



MMBT2907AWT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2907AWT1/D
Preliminary Information
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 package
which is designed for low power surface mount applications.
COLLECTOR
3
1
BASE
MMBT2907AWT1
Motorola Preferred Device
3
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2907AWT1 = 2F
Symbol
VCEO
VCBO
VEBO
IC
Value
–60
–60
–5.0
–600
Symbol
PD
RqJA
TJ, Tstg
Max
150
833
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
v v2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
CASE 419 – 02, STYLE 3
SOT– 323/SC – 70
Min Max Unit
–60 — Vdc
–60 — Vdc
–5.0 — Vdc
— –50 nAdc
— –50 nAdc
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT2907AWT1
MMBT2907AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain (1)
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
HFE
75 —
100 —
100 —
100 —
50 —
VCE(sat)
Vdc
–0.4
–1.6
VBE(sat)
Vdc
–1.3
–2.6
Current – Gain — Bandwidth Product
(IC = –50 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
fT 200 — MHz
Cobo — 8.0 pF
Cibo — 30 pF
Turn–On Time
Delay Time
Rise Time
(VCC = –30 Vdc,
IC = –150 mAdc, IB1 = –15 mAdc)
Storage Time
Fall Time
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
ton — 45
td — 10
tr — 40
ns
ts — 80
tf — 30
toff — 100
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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