MMBT2907AWT1 PNP Silicon Datasheet

MMBT2907AWT1 Datasheet, PDF, Equivalent


Part Number

MMBT2907AWT1

Description

General Purpose Transistor PNP Silicon

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBT2907AWT1 Datasheet


MMBT2907AWT1
MMBT2907AWT1
Preferred Device
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−60
−60
−5.0
−600
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
TJ, Tstg
150
833
−55 to
+150
mW
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC −70/SOT−323
CASE 419 −04
STYLE 3
MARKING DIAGRAM
20
20 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT2907AWT1 SC−70 3000 Tape & Reel
MMBT2907AWT1G SC−70 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 3
1
Publication Order Number:
MMBT2907AWT1/D

MMBT2907AWT1
MMBT2907AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
Base Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
Collector Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ON CHARACTERISTICS(3)
DC Current Gain (Note 2)
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
Collector −Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
Base −Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −50 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
(VCC = −30 Vdc,
IC = −150 mAdc, IB1 = −15 mAdc)
Storage Time
Fall Time
Turn−Off Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = 15 mAdc)
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
−60
−60
−5.0
− Vdc
− Vdc
− Vdc
−50 nAdc
−50 nAdc
HFE
VCE(sat)
VBE(sat)
75
100
100
100
50
fT
Cobo
Cibo
200
Vdc
−0.4
−1.6
Vdc
−1.3
−2.6
− MHz
8.0 pF
30 pF
ton − 45
td − 10
tr − 40
ns
ts − 80
tf − 30
toff − 100
http://onsemi.com
2


Features MMBT2907AWT1 Preferred Device General P urpose Transistor PNP Silicon These tra nsistors are designed for general purpo se amplifier applications. They are hou sed in the SC−70/SOT−323 package wh ich is designed for low power surface m ount applications. Features http://ons emi.com COLLECTOR 3 1 BASE • Pb−Fr ee Package is Available MAXIMUM RATING S Rating Collector −Emitter Voltage C ollector −Base Voltage Emitter −Bas e Voltage Collector Current − Continu ous Symbol VCEO VCBO VEBO IC Value −6 0 −60 −5.0 −600 Unit Vdc Vdc Vdc mAdc 2 EMITTER THERMAL CHARACTERISTIC S Characteristic Total Device Dissipati on FR− 5 Board (Note 1) TA = 25°C Th ermal Resistance Junction−to−Ambien t Junction and Storage Temperature Symb ol PD RqJA TJ, Tstg Max 150 833 −55 t o +150 Unit mW °C/W °C 1 2 3 SC − 70/SOT−323 CASE 419 −04 STYLE 3 MA RKING DIAGRAM Maximum ratings are thos e values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating c.
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