MMBT4403 TRANSISTORS PNP Datasheet

MMBT4403 Datasheet, PDF, Equivalent


Part Number

MMBT4403

Description

SMALL SIGNAL TRANSISTORS (PNP)

Manufacture

General

Total Page 3 Pages
Datasheet
Download MMBT4403 Datasheet


MMBT4403
ADVANCED INFORMATION
ADVANCED INFORMATION
MMBT4403
SMALL SIGNAL TRANSISTORS (PNP)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
FEATURES
¨ PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
¨ As complementary type, the NPN
transistor MMBT4401 is recommended.
¨ This transistor is also available in the TO-92 case with
the type designation 2N4403.
.037(0.95) .037(0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: 2T
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation FR-5 Board,* TA=25°C
Derate above 25°C
Power Dissipation Alumina Substrate,** TA=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
FR-5 Board
Alumina Substrate
Junction Temperature
Storage Temperature Range
SYMBOL
ÐVCBO
ÐVCEO
ÐVEBO
ÐIC
Ptot
Ptot
RQJA
Tj
TS
VALUE
40
40
5.0
600
225
1.8
300
2.4
556
417
150
Ð55 to +150
UNIT
Volts
Volts
Volts
mA
mW
mW/°C
mW
mW/°C
°C/W
¡C
¡C
*FR-5 = 1.0 x 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2/17/99

MMBT4403
MMBT4403
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at ÐIC = 0.1 mA, IE = 0
Collector-Emitter Breakdown Voltage(1)
at ÐIC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at ÐIE = 0.1 mA, IC = 0
Collector-Emitter Saturation Voltage(1)
at ÐIC = 150 mA, ÐIB = 15 mA
at ÐIC = 500 mA, ÐIB = 50 mA
Base-Emitter Saturation Voltage(1)
at ÐIC = 150 mA, ÐIB = 15 mA
at ÐIC = 500 mA, ÐIB = 50 mA
Collector-Emitter Cutoff Current
at ÐVEB = 0.4 V, ÐVCE = 35 V
Emitter-Base Cutoff Current
at ÐVEB = 0.4 V, ÐVCE = 35 V
DC Current Gain
at ÐVCE = 1 V, ÐIC = 0.1 mA
at ÐVCE = 1 V, ÐIC = 1 mA
at ÐVCE = 1 V, ÐIC = 10 mA
at ÐVCE = 2 V, ÐIC = 150 mA
at ÐVCE = 2 V, ÐIC = 500 mA
Input Impedance
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
Current Gain-Bandwidth Product
at ÐVCE = 10 V, ÐIC = 20 mA, f = 100 MHz
Collector-Base Capacitance
at ÐVCB = 10 V, IE = 0, f = 1 MHz
Emitter-Base Capacitance
at ÐVEB = 0.5 V, IC = 0, f = 1 MHz,
SYMBOL
ÐV(BR)CBO
ÐV(BR)CEO
ÐV(BR)EBO
ÐVCEsat
ÐVCEsat
ÐVBEsat
ÐVBEsat
ÐICEX
ÐIBEV
hFE
hFE
hFE
hFE
hFE
hie
fT
CCBO
CEBO
MIN.
40
40
5.0
Ð
Ð
0.75
Ð
Ð
Ð
30
60
100
100
20
1.5
200
Ð
Ð
NOTES:
(1) Pulse test: pulse width ² 300m duty cycle ² 2%
MAX.
Ð
Ð
Ð
0.40
0.75
0.95
1.30
100
100
Ð
Ð
Ð
300
Ð
15
Ð
8.5
30
UNIT
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
MHz
pF
pF


Features ADVANCED INFORMATION ADVANCED INFORMATI ON MMBT4403 SMALL SIGNAL TRANSISTORS ( PNP) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATUR ES ¨ PNP Silicon Epitaxial Planar Tran sistor for switching and amplifier appl ications. Top View ¨ As complementar y type, the NPN transistor MMBT4401 is recommended. ¨ This transistor is also available in the TO-92 case with the t ype designation 2N4403. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037 (0.95) .037(0.95) .045 (1.15) .037 (0. 95) MECHANICAL DATA Case: SOT-23 Plast ic Package Weight: approx. 0.008g Marki ng code: 2T .016 (0.4) .016 (0.4) .1 02 (2.6) .094 (2.4) Dimensions in inch es and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND THERMAL CHARACTERIS TICS Ratings at 25¡C ambient temperatu re unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Vol tage Collector Current Power Dissipation FR-5 Board,* TA=25°C Derat.
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