TransistorPNP Silicon. MMBT5401LT1 Datasheet


MMBT5401LT1 Silicon. Datasheet pdf. Equivalent


MMBT5401LT1


High Voltage Transistor(PNP Silicon)
MMBT5401LT1
Preferred Device

High Voltage Transistor
PNP Silicon
Features

• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −150 −160 −5.0 −500 Unit Vdc Vdc Vdc mAdc

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COLLECTOR 3 1 BASE 2 EMITTER

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

MARKING DIAGRAM

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 2L = Device Code M = Month Code SOT−23 (TO−236) CASE 318 STYLE 6 2L M

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ORDERING INFORMATION
Device MMBT5401LT1 MMBT5401LT1G MMBT5401LT3 MMBT5401LT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping† 3000 Tape & Reel 3000 Tape & Reel 10,00...



MMBT5401LT1
MMBT5401LT1
Preferred Device
High Voltage Transistor
PNP Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
−150
Vdc
Collector −Base Voltage
VCBO
−160
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−500
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD 225 mW
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1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate Above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
−55 to +150
°C
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COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT−23 (TO−236)
CASE 318
STYLE 6
2L M
2L = Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT5401LT1 SOT−23 3000 Tape & Reel
MMBT5401LT1G
MMBT5401LT3
MMBT5401LT3G
SOT−23 3000 Tape & Reel
(Pb−Free)
SOT−23 10,000 Tape & Reel
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 4
1
Publication Order Number:
MMBT5401LT1/D

MMBT5401LT1
MMBT5401LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −120 Vdc, IE = 0)
(VCB = −120 Vdc, IE = 0, TA = 100°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −50 mAdc, VCE = −5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Small Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz)
Symbol Min Max Unit
V(BR)CEO
−150
Vdc
V(BR)CBO
−160
Vdc
V(BR)EBO
Vdc
−5.0 −
ICES
− −50 nAdc
− −50 mAdc
hFE
50 −
60 240
50 −
VCE(sat)
Vdc
− −0.2
− −0.5
VBE(sat)
Vdc
− −1.0
− −1.0
fT
Cobo
hfe
NF
MHz
100 300
pF
− 6.0
40 200
dB
− 8.0
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2




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