MMBT6427LT1 Darlington Transistor Datasheet

MMBT6427LT1 Datasheet, PDF, Equivalent


Part Number

MMBT6427LT1

Description

Darlington Transistor

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBT6427LT1 Datasheet


MMBT6427LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT6427LT1/D
Darlington Transistor
NPN Silicon
COLLECTOR 3
BASE
1
MMBT6427LT1
Motorola Preferred Device
EMITTER 2
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT6427LT1 = 1V
Symbol
VCEO
VCBO
VEBO
IC
Value
40
40
12
500
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IC = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
40 —
Vdc
40 —
Vdc
12 —
µAdc
— 1.0
nAdc
— 50
nAdc
— 50
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT6427LT1
MMBT6427LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc)
Base – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
Base – Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
hFE
VCE(sat)(3)
VBE(sat)
VBE(on)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Current Gain — High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Cobo
Cibo
|hfe|
NF
Min Max
10,000
20,000
14,000
100,000
200,000
140,000
— 1.2
— 1.5
— 2.0
— 1.75
— 7.0
— 15
1.3 —
— 10
Unit
Vdc
Vdc
Vdc
pF
pF
Vdc
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT6427LT1/D D arlington Transistor NPN Silicon COLLEC TOR 3 BASE 1 MMBT6427LT1 Motorola Pref erred Device EMITTER 2 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter V oltage Collector – Base Voltage Emitt er – Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc Vdc Vdc mAd c CASE 318 – 08, STYLE 6 SOT– 23 ( TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate abo ve 25°C Thermal Resistance, Junction t o Ambient Total Device Dissipation Alum ina Substrate,(2) TA = 25°C Derate abo ve 25°C Thermal Resistance, Junction t o Ambient Junction and Storage Temperat ure Symbol PD Max 225 1.8 RqJA PD 556 3 00 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W C DEVICE MARKING MMBT6427LT1 = 1V EL ECTRICAL CHARACTERISTICS (TA = 25°C un less otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – E.
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