MMBT6429LT1 TransistorsNPN Silicon Datasheet

MMBT6429LT1 Datasheet, PDF, Equivalent


Part Number

MMBT6429LT1

Description

Amplifier Transistors(NPN Silicon)

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBT6429LT1 Datasheet


MMBT6429LT1
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MMBT6428LT1,
MMBT6429LT1
Amplifier Transistors
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol 6428LT1 6429LT1 Unit
Collector −Emitter Voltage
VCEO
50
45 Vdc
Collector −Base Voltage
VCBO
60
55 Vdc
Emitter −Base Voltage
VEBO 6.0 Vdc
Collector Current − Continuous
IC
200 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
−55 to +150
°C
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
xxx M
1
xxx = Specific Device Code
MMBT6428LT1 − 1KM
MMBT6429LT1 − 1L
M = Date Code
ORDERING INFORMATION
Device
Package
MMBT6428LT1 SOT−23
MMBT6428LT1G SOT−23
(Pb−Free)
MMBT6429LT1 SOT−23
MMBT6429LT1G SOT−23
(Pb−Free)
Shipping
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 3
1
Publication Order Number:
MMBT6428LT1/D

MMBT6429LT1
MMBT6428LT1, MMBT6429LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
MMBT6428
MMBT6429
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current
(VCE = 30 Vdc)
MMBT6428
MMBT6429
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
Base −Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT6428
MMBT6429
Symbol
V(BR)CEO
V(BR)CBO
ICES
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Cobo
Cibo
Min Max
Unit
Vdc
50 −
45 −
Vdc
60 −
55 −
mAdc
− 0.1
mAdc
− 0.01
mAdc
− 0.01
250 −
500 −
250 650
500 1250
250 −
500 −
250 −
500 −
− 0.2
− 0.6
0.56 0.66
Vdc
Vdc
MHz
100 700
pF
− 3.0
pF
− 8.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2


Features www.DataSheet4U.com MMBT6428LT1, MMBT64 29LT1 Amplifier Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE • Pb−Free Packages are Ava ilable MAXIMUM RATINGS Rating Collecto r −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collect or Current − Continuous Symbol VCEO V CBO VEBO IC 6428LT1 50 60 6.0 200 6429L T1 45 55 Unit Vdc Vdc Vdc mAdc 1 2 3 2 EMITTER Maximum ratings are those val ues beyond which device damage can occu r. Maximum ratings applied to the devic e are individual stress limit values (n ot normal operating conditions) and are not valid simultaneously. If these lim its are exceeded, device functional ope ration is not implied, damage may occur and reliability may be affected. SOT 23 (TO−236) CASE 318 STYLE 6 MARKI NG DIAGRAM THERMAL CHARACTERISTICS Rati ng Total Device Dissipation FR− 5 Boa rd (Note 1) TA = 25°C Derate above 25 C Thermal Resistance, Junction−to− Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°.
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