MMBT6517LT1 Voltage Transistor Datasheet

MMBT6517LT1 Datasheet, PDF, Equivalent


Part Number

MMBT6517LT1

Description

High Voltage Transistor

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBT6517LT1 Datasheet


MMBT6517LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT6517LT1/D
High Voltage Transistor
NPN Silicon
COLLECTOR
3
MMBT6517LT1
Motorola Preferred Device
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Base Current
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT6517LT1 = 1Z
Symbol
VCEO
VCBO
VEBO
IB
IC
Value
350
350
5.0
250
500
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc)
Collector Cutoff Current
(VCB = 250 Vdc)
Emitter Cutoff Current
(VEB = 5.0 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
350 —
Vdc
350 —
Vdc
6.0 —
nAdc
— 50
nAdc
— 50
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT6517LT1
MMBT6517LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
Base – Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
SMALL– SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
VBE(on)
20
30
30
20
15
200
200
Vdc
0.30
0.35
0.50
1.0
Vdc
0.75
0.85
0.90
Vdc
2.0
Current Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 20 Vdc, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, f = 1.0 MHz)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
fT MHz
40 200
Ccb pF
— 6.0
Ceb pF
— 80
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT6517LT1/D H igh Voltage Transistor NPN Silicon COLL ECTOR 3 1 BASE MMBT6517LT1 Motorola Pr eferred Device 3 MAXIMUM RATINGS Rati ng Collector – Emitter Voltage Collec tor – Base Voltage Emitter – Base V oltage Base Current Collector Current Continuous Symbol VCEO VCBO VEBO IB IC Value 350 350 5.0 250 500 2 EMITTER Unit Vdc Vdc Vdc mAdc mAdc 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 2 36AB) THERMAL CHARACTERISTICS Characte ristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambien t Total Device Dissipation Alumina Subs trate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambien t Junction and Storage Temperature Symb ol PD Max 225 1.8 RqJA PD 556 300 2.4 R qJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVI CE MARKING MMBT6517LT1 = 1Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OF.
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