MMBT6520LT1 Voltage Transistor Datasheet

MMBT6520LT1 Datasheet, PDF, Equivalent


Part Number

MMBT6520LT1

Description

High Voltage Transistor

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBT6520LT1 Datasheet


MMBT6520LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT6520LT1/D
High Voltage Transistor
PNP Silicon
COLLECTOR
3
MMBT6520LT1
Motorola Preferred Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Base Current
Collector Current — Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IB
IC
–350
–350
–5.0
–250
–500
MMBT6520LT1 = 2Z
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mA)
Collector–Base Breakdown Voltage (IC = –100 µA)
Emitter–Base Breakdown Voltage (IE = –10 µA)
Collector Cutoff Current (VCB = –250 V)
Emitter Cutoff Current (VEB = –4.0 V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Unit
Vdc
Vdc
Vdc
mA
mAdc
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min Max Unit
–350
–350
–5.0
–50
–50
Vdc
Vdc
Vdc
nA
nA
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT6520LT1
MMBT6520LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mA, VCE = –10 V)
(IC = –10 mA, VCE = –10 V)
(IC = –30 mA, VCE = –10 V)
(IC = –50 mA, VCE = –10 V)
(IC = –100 mA, VCE = –10 V)
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –1.0 mA)
(IC = –20 mA, IB = –2.0 mA)
(IC = –30 mA, IB = –3.0 mA)
(IC = –50 mA, IB = –5.0 mA)
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –1.0 mA)
(IC = –20 mA, IB = –2.0 mA)
(IC = –30 mA, IB = –3.0 mA)
Base–Emitter On Voltage
(IC = –100 mA, VCE = –10 V)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
VBE(on)
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –20 V, f = 20 MHz)
Collector–Base Capacitance
(VCB= –20 V, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB= –0.5 V, f = 1.0 MHz)
fT
Ccb
Ceb
Min
20
30
30
20
15
40
Max
200
200
–0.30
–0.35
–0.50
–1.0
–0.75
–0.85
–0.90
–2.0
200
6.0
100
Unit
Vdc
Vdc
Vdc
MHz
pF
pF
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT6520LT1/D H igh Voltage Transistor PNP Silicon COLL ECTOR 3 1 BASE MMBT6520LT1 Motorola Pr eferred Device 3 2 EMITTER 1 2 MAXI MUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitte r–Base Voltage Base Current Collector Current — Continuous Symbol VCEO VCB O VEBO IB IC Value –350 –350 –5.0 –250 –500 Unit Vdc Vdc Vdc mA mAdc CASE 318 – 08, STYLE 6 SOT– 23 (T O – 236AB) DEVICE MARKING MMBT6520LT 1 = 2Z THERMAL CHARACTERISTICS Charact eristic Total Device Dissipation FR-5 B oard (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Subst rate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambien t Junction and Storage Temperature Symb ol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C EL ECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF .
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