RF Transistor. MMBT918 Datasheet


MMBT918 Transistor. Datasheet pdf. Equivalent


MMBT918


NPN RF Transistor
PN918 / MMBT918

Discrete POWER & Signal Technologies

PN918

MMBT918
C

E C B

TO-92
E

SOT-23
Mark: 3B

B

NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43.

Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value
15 30 3.0 50 -55 to +150

Units
V V V mA °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN918 350 2.8 125 357

Max
*MMBT918 225 1.8 556

Units
mW mW/ °C °C/W °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

©1997 Fairchild Semiconductor Corporation

PN918 / MMBT918

NPN RF Transistor
(continued)

Electrical Characteristics
Symbol Parameter

TA =...



MMBT918
Discrete POWER & Signal
Technologies
PN918
MMBT918
C
C
BE
TO-92
SOT-23
Mark: 3B
E
B
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
15
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
3.0
IC Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN918
350
2.8
125
357
*MMBT918
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation

MMBT918
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
NPN RF Transistor
(continued)
Min Max Units
OFF CHARACTERISTICS
VCEO(sus)
V(BR)CBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
ICBO
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 3.0 mA, IB = 0
IC = 1.0 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 15 V, IE = 0
VCB = 15 V, TA = 150°C
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 3.0 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 10 mA, IB = 1.0 mA
15 V
30 V
3.0 V
0.01 µA
1.0 µA
20
0.4
1.0
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Cobo
Cibo
Current Gain - Bandwidth Product
IC = 4.0 mA, VCE = 10 V,
f = 100 MHz
600
MHz
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
VCB = 0, IE = 0, f = 1.0 MHz
1.7 pF
3.0 pF
Input Capacitance
VBE = 0.5 V, IC = 0, f = 1.0 MHz
2.0 pF
NF Noise Figure
IC = 1.0 mA, VCE = 6.0 V,
RG = 400, f = 60 MHz
6.0 dB
FUNCTIONAL TEST
Gpe Amplifier Power Gain
PO Power Output
η Collector Efficiency
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 12 V, IC = 6.0 mA,
f = 200 MHz
VCB = 15 V, IC = 8.0 mA,
f = 500 MHz
VCB = 15 V, IC = 8.0 mA,
f = 500 MHz
15
30
25
dB
mW
%




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)