MMBT918LT1 VHF/UHF Transistor Datasheet

MMBT918LT1 Datasheet, PDF, Equivalent


Part Number

MMBT918LT1

Description

VHF/UHF Transistor

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBT918LT1 Datasheet


MMBT918LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT918LT1/D
VHF/UHF Transistor
NPN Silicon
COLLECTOR
3
MMBT918LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board,(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT918LT1 = M3B
Symbol
VCEO
VCBO
VEBO
IC
Value
15
30
3.0
50
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 3.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
15 — Vdc
30 — Vdc
3.0 — Vdc
— 50 nAdc
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

MMBT918LT1
MMBT918LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
hFE 20 — —
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
0.4 Vdc
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
1.0 Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT 600 — MHz
Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
pF
— 3.0
— 1.7
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
2.0
pF
Noise Figure
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 , f = 60 MHz) (Figure 1)
NF — 6.0 dB
Power Output
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz)
Pout
30
— mW
Common–Emitter Amplifier Power Gain
(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz)
Gpe 11 — dB
VBB
EXTERNAL
100 k
VCC
1000 pF BYPASS
0.018 µF
0.018 µF
0.018 µF
C
50
3G
0.018 µF
NF TEST CONDITIONS
IC = 1.0 mA
VCE = 6.0 VOLTS
RS = 50
f = 60 MHz
Gpe TEST CONDITIONS
IC = 6.0 mA
VCE = 12 VOLTS
f = 200 MHz
RF
VM
Figure 1. NF, Gpe Measurement Circuit 20–200
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT918LT1/D VH F/UHF Transistor NPN Silicon 1 BASE M MBT918LT1 COLLECTOR 3 3 MAXIMUM RATIN GS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Con tinuous Symbol VCEO VCBO VEBO IC Value 15 30 3.0 50 2 EMITTER Unit Vdc Vdc Vd c mAdc 1 2 CASE 318 – 08, STYLE 6 S OT– 23 (TO – 236AB) THERMAL CHARAC TERISTICS Characteristic Total Device D issipation FR– 5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissi pation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Stora ge Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/ °C °C/W °C DEVICE MARKING MMBT918LT 1 = M3B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Charac teristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC.
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