MMBTA13 Darlington Transistors Datasheet

MMBTA13 Datasheet, PDF, Equivalent


Part Number

MMBTA13

Description

NPN Silicon Darlington Transistors

Manufacture

Infineon Technologies AG

Total Page 4 Pages
Datasheet
Download MMBTA13 Datasheet


MMBTA13
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
NPN Silicon Darlington Transistors
 High DC current gain
 High collector current
 Low collector-emitter saturation voltage
3
2
1 VPS05161
Type
SMBTA13/ MMBTA13
SMBTA14/ MMBTA14
Marking
s1M 1 = B
s1N 1 = B
Pin Configuration
2=E
3=C
2=E
3=C
Maximum Ratings
Parameter
Symbol
Values
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 81 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
VCES
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
30
30
10
300
500
100
200
330
150
-65 ... 150
210
1For calculation of RthJA please refer to Application Note Thermal Resistance
Package
SOT23
SOT23
Unit
V
mA
mA
mW
°C
K/W
1 Feb-18-2002

MMBTA13
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 10 V, IC = 0
V(BR)CES 30
V(BR)CBO 30
V(BR)EBO 10
ICBO
-
ICBO
-
IEBO
-
-
-
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 5 V
SMBTA13
SMBTA14
hFE
5000
10000
-
-
IC = 100 mA, VCE = 5 V
SMBTA13
SMBTA14
10000
20000
-
-
max.
-
-
-
100
10
100
-
-
-
-
Unit
V
nA
µA
nA
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 0.1 mA
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
VCEsat - - 1.5 V
VBEsat - - 2
fT
125 -
- MHz
1) Pulse test: t 300µs, D = 2%
2
Feb-18-2002


Features SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN S ilicon Darlington Transistors  High DC current gain  High collector current  Low collector-emitter saturation volt age 3 2 1 VPS05161 Type SMBTA13/ MMB TA13 SMBTA14/ MMBTA14 Maximum Ratings P arameter Collector-emitter voltage Coll ector-base voltage Emitter-base voltage Marking s1M s1N 1=B 1=B Pin Configur ation 2=E 2=E 3=C 3=C Package SOT23 SO T23 Symbol VCES VCBO VEBO Values 30 3 0 10 300 500 100 200 330 150 -65 ... 15 0 Unit V DC collector current Peak co llector current Base current Peak base current Total power dissipation, TS = 8 1 °C Junction temperature Storage temp erature Thermal Resistance IC ICM IB I BM Ptot Tj Tstg RthJS mA mA mW °C J unction - soldering point1) 210 K/W 1For calculation of R thJA please refe r to Application Note Thermal Resistanc e 1 Feb-18-2002 SMBTA13/ MMBTA13, SM BTA14/ MMBTA14 Electrical Characterist ics at TA = 25°C, unless otherwise spe cified. Parameter Symbol Values min. DC Characteristics Collector-.
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