MMBTA14 DARLINGTON TRANSISTOR Datasheet

MMBTA14 Datasheet, PDF, Equivalent


Part Number

MMBTA14

Description

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Manufacture

Diodes Incorporated

Total Page 3 Pages
Datasheet
Download MMBTA14 Datasheet


MMBTA14
MMBTA13 / MMBTA14
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Types Available (MMBTA63
/MMBTA64)
Ideal for Medium Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
MMBTA13 Marking (See Page 3): K2D, K3D
MMBTA14 Marking (See Page 3): K3D
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
A
C
BC
B TOP VIEW E
ED
G
H
K
J
L
C
BE
M
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, TSTG
Value
30
30
10
300
300
417
-55 to +150
Unit
V
V
V
mA
mW
°CW
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Symbol
Min
Max
V(BR)CEO
ICBO
IEBO
30
100
100
MMBTA13
MMBTA14
MMBTA13
MMBTA14
hFE
VCE(SAT)
VBE(SAT)
Cobo
Cibo
fT
5,000
10,000
10,000
20,000
1.5
2.0
8.0 Typical
15 Typical
125
Unit Test Condition
V IC = 100μA VBE = 0V
nA VCB = 30V, IE = 0
nA VEB = 10V, IC = 0
IC = 10mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
V IC = 100mA, IB = 100μA
V IC = 100mA, VCE = 5.0V
pF
pF
MHz
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 5.0V, IC = 10mA, f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2: Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30047 Rev. 11 - 2
1 of 3
www.diodes.com
MMBTA13 / MMBTA14
© Diodes Incorporated

MMBTA14
400
350
300
250
200
150
100
50
0
0 25
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs Ambient Temperature
1,000,000
100,000
10,000
1,000
100
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs Collector Current
1000
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
100
10
1
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs Collector Current
DS30047 Rev. 11 - 2
2 of 3
www.diodes.com
MMBTA13 / MMBTA14
© Diodes Incorporated


Features MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARL INGTON TRANSISTOR Features • Epitaxi al Planar Die Construction • Compleme ntary PNP Types Available (MMBTA63 /MMB TA64) • Ideal for Medium Power Amplif ication and Switching • High Current Gain • Lead, Halogen and Antimony Fre e, RoHS Compliant "Green" Device (Notes 3 and 4) • Qualified to AEC-Q101 Sta ndards for High Reliability Mechanical Data • Case: SOT-23 • Case Material : Molded Plastic. UL Flammability Class ification Rating 94V-0 • Moisture Sen sitivity: Level 1 per J-STD-020D • Te rminal Connections: See Diagram • Ter minals: Solderable per MIL-STD-202, Met hod 208 • Lead Free Plating (Matte Ti n Finish annealed over Alloy 42 leadfra me). • MMBTA13 Marking (See Page 3): K2D, K3D • MMBTA14 Marking (See Page 3): K3D • Ordering & Date Code Inform ation: See Page 3 • Weight: 0.008 gra ms (approximate) A C BC B TOP VIEW E ED G H K J L C BE M SOT-23 Dim Mi n Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.0.
Keywords MMBTA14, datasheet, pdf, Diodes Incorporated, NPN, SURFACE, MOUNT, DARLINGTON, TRANSISTOR, MBTA14, BTA14, TA14, MMBTA1, MMBTA, MMBT, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)