MMBTA14LT1 TransistorsNPN Silicon Datasheet

MMBTA14LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA14LT1

Description

Darlington Amplifier Transistors(NPN Silicon)

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBTA14LT1 Datasheet


MMBTA14LT1
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MMBTA13LT1,
MMBTA14LT1
MMBTA14LT1 is a Preferred Device
Darlington Amplifier
Transistors
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCES
VCBO
VEBO
IC
30 Vdc
30 Vdc
10 Vdc
300 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
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COLLECTOR 3
BASE
1
EMITTER 2
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
1x M G
G
1
1x = Device Code
x = M for MMBTA13LT1
x = N for MMBTA14LT1
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBTA13LT1 SOT−23 3,000 / Tape & Reel
MMBTA13LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBTA14LT1 SOT−23 3,000 / Tape & Reel
MMBTA14LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBTA13LT1/D

MMBTA14LT1
MMBTA13LT1, MMBTA14LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBTA13
MMBTA14
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
Base −Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| ftest.
MMBTA13
MMBTA14
Symbol
V(BR)CES
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Min
30
5000
10,000
10,000
20,000
125
Max
100
100
1.5
2.0
Unit
Vdc
nAdc
nAdc
Vdc
Vdc
MHz
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2


Features www.DataSheet4U.com MMBTA13LT1, MMBTA14 LT1 MMBTA14LT1 is a Preferred Device D arlington Amplifier Transistors NPN Sil icon http://onsemi.com Features • Pb −Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Vol tage Collector −Base Voltage Emitter −Base Voltage Collector Current − C ontinuous Symbol VCES VCBO VEBO IC Valu e 30 30 10 300 Unit Vdc Vdc Vdc mAdc 1 2 Symbol PD 225 1.8 RqJA PD 300 2.4 RqJ A TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 1x 556 mW mW/°C °C/W Max Un it COLLECTOR 3 BASE 1 EMITTER 2 3 T HERMAL CHARACTERISTICS Characteristic T otal Device Dissipation FR− 5 Board ( Note 1) TA = 25°C Derate above 25°C T hermal Resistance, Junction−to−Ambi ent Total Device Dissipation Alumina Su bstrate, (Note 2) TA = 25°C Derate abo ve 25°C Thermal Resistance, Junction to−Ambient Junction and Storage Temp erature SOT−23 (TO−236) CASE 318 S TYLE 6 MARKING DIAGRAM 1x M G G 1 = D evice Code x = M for MMBTA13LT1 x = N for MMBTA14LT1 M = Date Code* G = Pb−Free Package (Note: Micro.
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