MMBTA20 Purpose Amplifier Datasheet

MMBTA20 Datasheet, PDF, Equivalent


Part Number

MMBTA20

Description

General Purpose Amplifier

Manufacture

Motorola

Total Page 1 Pages
Datasheet
Download MMBTA20 Datasheet


MMBTA20
MMBTA20
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE AMPLIFIER
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
v CEO
v EBO
ic
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, Ta = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R&JA
'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
40
4.0
100
Max
350
2.8
150
357
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 1.0 mAdc, Ib = 0)
Emitter-Base Breakdown Voltage
(IE = 100 nAdc, Ic = 0)
Collector Cutoff Current
(VCB = 30 Vdc, = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 5.0 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
Current-Gain Bandwidth Product
dC = 5.0 mAdc, Vce = 10 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 10 Vdc, El = 0, f = 100 kHz)
Symbol
v (BR)CEO
v (BR)EBO
!CBO
Min
40
4.0
Max
100
hFE
vCE(sat)
h
C bo
40 400
0.25
-125
. ;. 4.0
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°c/w
Unit
Vdc
Vdc
nAdc
-
Vdc
MHz
PF
3-106


Features MMBTA20 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE AMPLIFIER NPN SILICON MAXIMUM RATINGS Rating Co llector-Emitter Voltage Emitter-Base Vo ltage —Collector Current Continuous Symbol v CEO v EBO ic THERMAL CHARACTE RISTICS Characteristic *Total Device D issipation, Ta = 25°C Derate above 25 C Symbol PD Storage Temperature Tst g 'Thermal Resistance Junction to Ambi ent R&JA 'Package mounted on 99.5% al umina 10 x 8 x 0.6 mm. Value 40 4.0 10 0 Max 350 2.8 150 357 ELECTRICAL CHARA CTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERIS TICS Collector-Emitter Breakdown Voltag e dC = 1.0 mAdc, Ib = 0) Emitter-Base B reakdown Voltage (IE = 100 nAdc, Ic = 0 ) Collector Cutoff Current (VCB = 30 Vd c, l£ = 0) ON CHARACTERISTICS DC Curre nt Gain dC = 5.0 mAdc, Vce = 10 Vdc) Co llector-Emitter Saturation Voltage dC = 10 mAdc, Ib = 1.0 mAdc) —Current-Gai n Bandwidth Product dC = 5.0 mAdc, Vce = 10 Vdc, f = 100 MHz) Output Capacitance (Vcb = 10 Vdc, El = 0, f = 10.
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