MMBTA43LT1 TransistorsNPN Silicon Datasheet

MMBTA43LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA43LT1

Description

High Voltage Transistors(NPN Silicon)

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBTA43LT1 Datasheet


MMBTA43LT1
MMBTA42LT1,
MMBTA43LT1
MMBTA42LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Symbol MMBTA42 MMBTA43 Unit
Collector −Emitter Voltage
VCEO
Collector −Base Voltage
VCBO
Emitter −Base Voltage
VEBO
Collector Current−Continuous
IC
THERMAL CHARACTERISTICS
300 200
300 200
6.0 6.0
500
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAMS
1D X
M1E X
MMBTA42LT1
MMBTA43LT1
1D, M1E = Specific Device Code
X = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMBTA42LT1 SOT−23
MMBTA42LT1G SOT−23
MMBTA43LT1 SOT−23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MMBTA43LT3 SOT−23 10000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 5
1
Publication Order Number:
MMBTA42LT1/D

MMBTA43LT1
MMBTA42LT1, MMBTA43LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
MMBTA42
MMBTA43
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBTA42
MMBTA43
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
MMBTA42
MMBTA43
MMBTA42
MMBTA43
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
Both Types
Both Types
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42
MMBTA43
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MMBTA42
MMBTA43
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBTA42
MMBTA43
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
300
200
300
200
6.0
hFE
VCE(sat)
VBE(sat)
25
40
40
40
fT 50
Ccb
Max Unit
Vdc
Vdc
− Vdc
mAdc
0.1
0.1
mAdc
0.1
0.1
Vdc
0.5
0.5
0.9 Vdc
− MHz
pF
3.0
4.0
http://onsemi.com
2


Features MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a P referred Device High Voltage Transisto rs NPN Silicon Features http://onsemi.c om • Pb−Free Package May be Availa ble. The G−Suffix Denotes a Pb−Free Lead Finish MAXIMUM RATINGS Rating Col lector −Emitter Voltage Collector − Base Voltage Emitter −Base Voltage Co llector Current−Continuous Symbol VCE O VCBO VEBO IC MMBTA42 300 300 6.0 500 MMBTA43 200 200 6.0 Unit Vdc Vdc Vdc mA dc COLLECTOR 3 1 BASE 2 EMITTER THERM AL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Therma l Resistance, Junction−to−Ambient T otal Device Dissipation Alumina Substra te (Note 2) TA = 25°C Derate above 25 C Thermal Resistance, Junction−to− Ambient Junction and Storage Temperatur e 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 RqJA PD 556 300 Unit mW mW/°C °C/W mW 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 6 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W °C MARKING DIAG.
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