MMBTA70LT1 Purpose Transistor Datasheet

MMBTA70LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA70LT1

Description

General Purpose Transistor

Manufacture

Leshan Radio Company

Total Page 5 Pages
Datasheet
Download MMBTA70LT1 Datasheet


MMBTA70LT1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–40
–4.0
–100
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
mAdc
MMBTA70LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBTA70LT1 = M2C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current
( V CB = –30Vdc, I E = 0)
ON CHARACTERISTICS
DC Current Gain(I C = –5.0mAdc, V CE = –10 Vdc)
Collector–Emitter Saturation Voltage(I C = –10mAdc, I B = –1.0 mAdc)
V (BR)CEO
V (BR)EBO
I CBO
hFE
VCE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(I C = –5.0mAdc, V CE= –10Vdc, f = 100MHz)
Output Capacitance(V CB = –10Vdc, I E = 0, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
fT
C obo
Min
–40
–4.0
40
––
125
––
Max Unit
–– Vdc
–100
Vdc
nAdc
400
–0.25
––
Vdc
–– MHz
4.0 pF
M31–1/5

MMBTA70LT1
LESHAN RADIO COMPANY, LTD.
MMBTA70LT1
TYPICAL NOISE CHARACTERISTICS
(V CE = –5.0 Vdc, T A = 25°C)
10
7.0
5.0
3.0
2.0 1.0 mA
I C = 10 µA
BANDWIDTH = 1.0 Hz
R S ~~ 0
30 µA
100 µA
300 µA
1.0
10 20
50 100 200 500 1.0k 2.0k 5.0k 10k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20
I C = 1.0 mA
BANDWIDTH = 1.0 Hz
R S ~~
300 µA
100 µA
30 µA
10 µA
50 100 200 500 1.0k 2.0k 5.0k 10k
f, FREQUENCY (Hz)
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V CE = –5.0 Vdc, T A = 25°C)
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
20 30 50 70 100
2.0 dB
3.0 dB
5.0 dB
200 300 500 700 1.0k
I C , COLLECTOR CURRENT (mA)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0k
I C , COLLECTOR CURRENT (mA)
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100
200 300 500 700 1.0k
I C , COLLECTOR CURRENT (mA)
Figure 5. Wideband
Noise Figure is Defined as:
NF = 20 log 10 ( –en––2 +4K4KTTRRS+SIn2RS2–)1/ 2
e n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I n = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10 –23 j/°K)
T = Temperature of the Source Resistance (°K)
R s = Source Resistance (Ohms)
M31–2/5


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistor PNP Silicon 1 BASE MAX IMUM RATINGS Rating Symbol Collector –Emitter Voltage V CEO Emitter–Ba se Voltage V EBO Collector Current Continuous I C Value –40 –4.0 100 3 COLLECTOR 2 EMITTER Unit Vdc Vd c mAdc MMBTA70LT1 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total D evice Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Res istance, Junction to Ambient Total Devi ce Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Re sistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJ A PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 55 to +150 mW/°C °C/W °C DEVICE M ARKING MMBTA70LT1 = M2C ELECTRICAL CH ARACTERISTICS (TA = 25°C unless otherw ise noted.) Characteristic Symbol OF F CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Emitter–Base B.
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