MMBTH11 RF Transistor Datasheet

MMBTH11 Datasheet, PDF, Equivalent


Part Number

MMBTH11

Description

NPN RF Transistor

Manufacture

Fairchild

Total Page 8 Pages
Datasheet
Download MMBTH11 Datasheet


MMBTH11
Discrete POWER & Signal
Technologies
MPSH11
MMBTH11
C
C
BE
TO-92
SOT-23
Mark: 3G
E
B
NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100 µA to
10 mA range to 300 MHz, and low frequency drift common-base
VHF oscillator applications with high output levels for driving
FET mixers. Sourced from Process 47.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
3.0
IC Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPSH11
350
2.8
125
*MMBTH11
225
1.8
357 556
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation

MMBTH11
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
NPN RF Transistor
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 2.0 V, IC = 0
25 V
30 V
3.0 V
100 nA
100 nA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 4.0 mA, VCE = 10 V
IC = 4.0 mA, IB = 0.4 mA
IC = 4.0 mA, VCE = 10 V
60
0.5
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Ccb
Crb
rb’Cc
Current Gain - Bandwidth Product
IC = 4.0 mA, VCE = 10 V,
f = 100 MHz
650
MHz
Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.7 pF
Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz
0.6
0.9
pF
Collector Base Time Constant
IC = 4.0 mA, VCB = 10 V,
f = 31.8 MHz
9.0 pS
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
DC Typical Characteristics
DC Current Gain
vs Collector Current
300
VCE = 5V
250
125 ºC
200
150 25 °C
100
- 40 ºC
50
0
0.01
0.1 1
10
I C- COLLECTOR CURRENT (mA)
P4
100
Collector-Emitter Saturation
Voltage vs Collector Current
0.2
β = 10
0.15
125 ºC
0.1
25 °C
0.05
0.1
- 40 ºC
1 10
I C - COLLECTOR CURRENT (mA)
P4
20 30


Features MPSH11 / MMBTH11 Discrete POWER & Signa l Technologies MPSH11 MMBTH11 C E C BE TO-92 SOT-23 Mark: 3G B NPN RF Tr ansistor This device is designed for co mmon-emitter low noise amplifier and mi xer applications with collector current s in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-bas e VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maxi mum Ratings* Symbol VCEO VCBO VEBO IC T J, Tstg Collector-Emitter Voltage Colle ctor-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25 °C unless otherwise noted Parameter Value 25 30 3.0 50 -55 to +150 Units V V V mA °C Operating and Storage Junc tion Temperature Range *These ratings are limiting values above which the ser viceability of any semiconductor device may be impaired. NOTES: 1) These ratin gs are based on a maximum junction temp erature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applicatio.
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