Complementary Transistors. NTE175 Datasheet

NTE175 Transistors. Datasheet pdf. Equivalent

Part NTE175
Description Silicon Complementary Transistors
Feature NTE38 (PNP) & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Descr.
Manufacture NTE
Datasheet
Download NTE175 Datasheet




NTE175
NTE38 (PNP) & NTE175 (NPN)
Silicon Complementary Transistors
High Voltage, Medium Power Switch
Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–
speed switching and linear amplifier applications for high–voltage operational amplifiers, switching
regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
D Collector–Emitter Sustaining Voltage:
NTE38: VCEO(sus) = 350V @ IC = 200mA
NTE175: VCEO(sus) = 300V @ IC = 200mA
D Second Breakdown Collector Current:
NTE38 IS/b = 875mA @ VCE = 40V
NTE175 IS/b = 350mA @ VCE = 100V
D Usable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, VCB
NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Vdc
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5°C/W
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle 10%.



NTE175
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
NTE38
VCEO(sus) IC = 200mA, IB = 0
NTE175
350 – – V
300 – – V
CollectorEmitter Sustaining Voltage
NTE38 Only
VCEX(sus) IC = 200mA, VBE = 1.5V, L = 10mH
400 – – V
VCER(sus) IC = 200mA, IB = 0, RBE = 50
375 – – V
EmitterBase Breakdown Voltage
NTE38 Only
VEBO IE = 0.5mA, IC = 0
6––V
Collector Cutoff Current
ICEO VCE = 150V, IB = 0
– – 5 mA
Collector Cutoff Current
NTE38
ICEV VCE = 250V, VBE(off) = 1.5V
– – 0.5 mA
VCE = 250V, VBE(off) = 1.5V, TC = +100°C
5.0 mA
VCE = 315V, VBE(off) = 1.5V
– – 0.5 mA
VCE = 315V, VBE(off) = 1.5V, TC = +100°C
5.0 mA
VCE = 360V, VBE(off) = 1.5V
– – 0.5 mA
VCE = 360V, VBE(off) = 1.5V, TC = +100°C
5.0 mA
NTE175
ICEX VCE = 450V, VBE(off) = 1.5V
– – 1.0 mA
VCE = 300V, VBE(off) = 1.5V, TC = +150°C
3.0 mA
Emitter Cutoff Current
IEBO VEB = 6V, IC = 0
– – 0.5 mA
ON Characteristics (Note 2)
DC Current Gain
NTE38
NTE175
CollectorEmitter Saturation Voltage
NTE38
NTE175
hFE
VCE(sat)
IC = 1A, VCE = 4V
IC = 0.1A, VCE = 10V
IC = 1A, VCE = 2V
IC = 1A, VCE = 10V
IC = 1A, IB = 125mA
10 100
40 – –
8 80
25 100
– – 2.0 V
– – 0.75 V
BaseEmitter Saturation Voltage
NTE38
NTE175
BaseEmitter ON Voltage
NTE175 Only
Dynamic Characteristics
VBE(sat) IC = 1A, IB = 125mA
IC = 1A, IB = 100mA
VBE(on) IC = 1A, VCE = 10V
V
– – 1.4
– – 1.4 V
– – 1.4 V
Current Gain Bandwidth Product
NTE38
NTE175
fT IC = 200mA, VCE = 10V, ftest = 5MHz,
Note 3
20
15
MHz
MHz
Output Capacitance (NTE175 Only)
Cob VCB = 10V, IE = 0, f = 1MHz
– – 120 pF
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. fT = |hfe|  ftest







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