Complementary Transistors. NTE182 Datasheet

NTE182 Transistors. Datasheet pdf. Equivalent

Part NTE182
Description Silicon Complementary Transistors
Feature NTE182 (NPN) & NTE183 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Desc.
Manufacture NTE
Datasheet
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NTE182
NTE182 (NPN) & NTE183 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use
in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 10A
D High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39°C/W
Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 200mA, IB = 0, Note 1
ICEO VCE = 30V, IB = 0
ICEX VCE = 70V, VBE(off) = 1.5V
VCE = 70V, VBE(off) = 1.5V,
TC = +150°C
ICBO VCB = 70V, IE = 0
VCB = 70V, IE = 0, TC = +150°C
IEBO VBE = 5V, IC = 0
60
––V
– 700 µA
– 1.0 mA
– 5.0 mA
– 1.0 mA
– 10 mA
– 5.0 mA
Note 1. Pulse Test: Pulse Width 300µs. Duty Cycle 2%.



NTE182
Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
BaseEmitter ON Voltage
CollectorEmitter Saturation Voltage
Dynamic Characteristics
hFE
VBE(on)
VCE(sat)
IC = 4A, VCE = 4V
IC = 10A, VCE = 4V
IC = 4A, VCE = 4V
IC = 4A, IB = 400mA
IC = 10A, IB = 3.3A
20 100
5.0 – –
– – 1.8 V
– – 1.1 V
– – 8.0 V
Current GainBandwidth Product
fT IC = 500mA, VCE = 10V,
f = 1MHz
2.0 – – MHz
Note 1. Pulse Test: Pulse Width 300µs. Duty Cycle 2%.
.530 (13.4) Max
.143 (3.65) Dia Thru
.668
(17.0)
Max
E
B
.655
(16.6)
Max
.166 (4.23)
C (Heat Sink Area)
Heat Sink Contact
Area (Bottom)
.150 (3.82) Max







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