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NTE190

Part Number	NTE190
Manufacturer	NTE
Description	Silicon NPN Transistor High Voltage Amplifier
Published	May 9, 2005
Detailed Description	NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N ty...
Datasheet	NTE190 PDF File

Overview

NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators.
Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltatge: VCE(sat) = 0.
5V (Max) @ IC = 200mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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180V Collector–Base Voltage, VCB .
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