Voltage Amplifier. NTE190 Datasheet

NTE190 Amplifier. Datasheet pdf. Equivalent

Part NTE190
Description Silicon NPN Transistor High Voltage Amplifier
Feature NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon trans.
Manufacture NTE
Datasheet
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NTE190
NTE190
Silicon NPN Transistor
High Voltage Amplifier
Description:
The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applica-
tions, high voltage linear amplifiers, and high voltage transistor regulators.
Features:
D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA
D Low Collector–Emitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 200mA
D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +260°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO IC = 1mA, IB = 0
V(BR)CBO IC = 100µA, IE = 0
V(BR)EBO IE = 100µA, IC = 0
ICBO VCB = 150V, IE = 0
Min Typ Max Unit
180 – – V
180 – – V
5––V
– – 0.1 mA



NTE190
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
BaseEmitter ON Voltage
CollectorEmitter Saturation Voltage
Dynamic Characteristics
hFE
VBE(on)
VCE(sat)
IC = 10mA, VCE = 10V
IC = 200mA, VCE = 1V
IC = 200mA, IB = 20mA
40 – –
– – 1.0 V
– – 0.5 V
Current GainBandwidth Product
fT IC = 50mA, VCE = 20V,
f = 20MHz
35 – – MHz
Output Capacitance
Input Capacitance
Cob VCB = 10V, IE = 0, f = 100kHz
– – 12 pF
Cib VBE = 0.5V, IC = 0, f = 100kHz – – 110 pF
Note 1. Pulse Test: Pulse Width 300µs. Duty Cycle 2%.
.160
(4.06)
.100 (2.54)
.380 (9.65) Max
.050 (1.27)
.280 (7.25) Max
.128 (3.28) Dia
.218
(5.55)
.475
(12.0)
Min
EBC
.995
(25.3)
.100 (2.54)
.200 (5.08)
Collector Connected to Tab







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