NPN Transistor. NTE22 Datasheet

NTE22 Transistor. Datasheet pdf. Equivalent

Part NTE22
Description Silicon NPN Transistor
Feature NTE22 Silicon NPN Transistor AF PO, General Purpose Amp, Driver Features: D High Breakdown Voltage: .
Manufacture NTE
Datasheet
Download NTE22 Datasheet




NTE22
NTE22
Silicon NPN Transistor
AF PO, General Purpose Amp, Driver
Features:
D High Breakdown Voltage: VCEO = 80V
D Large IC Capacity: IC = 1A DC
D Good hFE Linearity
D Low Collector Saturation Voltage
Applications:
D Medium Power Output Stages
D High–Voltage Drivers
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Note 1. PW = 20ms, Duty Cycle = 1/2
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
V(BR)CEO IC = 1mA
V(BR)CBO IC = 50µA
V(BR)EBO IE = 50µA
ICBO VCB = 80V
IEBO VEB = 4V
hFE VCE = 3V, IC = 50mA
VCE(sat) IC = 500A, IB = 50mA
fT VCE = 10V, IC = 50mA
80 – – V
100 – – V
5––V
– – 1 µA
– – 1 µA
120 – 270
– 0.15 0.4 V
– 100 – MHz
Output Capacitance
Cob VCB = 10V, f = 1MHz
– 20 – pF



NTE22
.102 (2.6)
.280 (7.11)
E C B .185 (4.7)
.100 (2.54)
.051 (1.29)
.138 (3.5)
.022 (0.55)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)