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NTE312

NTE

N-Channel Silicon Junction Field Effect Transistor


Description
NTE312 N–Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High–Frequency Fi...



NTE

NTE312

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