field-effect transistor. PN4416A Datasheet

PN4416A transistor. Datasheet pdf. Equivalent

Part PN4416A
Description N-channel field-effect transistor
Feature DISCRETE SEMICONDUCTORS DATA SHEET PN4416; PN4416A N-channel field-effect transistor Product speci.
Manufacture Philips
Datasheet
Download PN4416A Datasheet

DISCRETE SEMICONDUCTORS DATA SHEET PN4416; PN4416A N-chann PN4416A Datasheet
PN4416A N-CHANNEL JFET Linear Systems replaces discontinued PN4416A Datasheet
Recommendation Recommendation Datasheet PN4416A Datasheet




PN4416A
DISCRETE SEMICONDUCTORS
DATA SHEET
PN4416; PN4416A
N-channel field-effect transistor
Product specification
File under Discrete Semiconductors, SC07
December 1997



PN4416A
Philips Semiconductors
N-channel field-effect transistor
Product specification
PN4416; PN4416A
FEATURES
Low noise
Interchangeability of drain and
source connections
High gain.
DESCRIPTION
N-channel symmetrical silicon
junction FETs in a SOT54 envelope.
These devices are intended for use in
VHF/UHF amplifiers, oscillators and
mixers.
PINNING - SOT54 (TO-92).
PIN DESCRIPTION
1 gate
2 source
3 drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage
PN4416
PN4416A
30 V
35 V
IDSS drain current
Ptot total power
dissipation
VDS = 15 V; VGS = 0 5
up to Tamb = 25 °C
15 mA
400 mW
VGS(off)
Yfs
gate-source cut-off
voltage
PN4416
PN4416A
common-source
transfer admittance
VDS = 15 V;
ID = 1 nA
VDS = 15 V;
VGS = 0; f = 1 kHz
− −6
2.5 6
4.5 7.5
V
V
mS
handbook, half1pa2ge
3
g
MAM042
d
s
Fig.1 Simplified outline and symbol.
December 1997
2





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