NPN Phototransistor. PNA1801L Datasheet

PNA1801L Phototransistor. Datasheet pdf. Equivalent

Part PNA1801L
Description Silicon NPN Phototransistor
Feature Phototransistors PNA1801L (PN168) Silicon NPN Phototransistor Unit : mm Not soldered 2.0 max. For .
Manufacture Panasonic Semiconductor
Datasheet
Download PNA1801L Datasheet

Phototransistors PNA1801L (PN168) Silicon NPN Phototransist PNA1801L Datasheet
Recommendation Recommendation Datasheet PNA1801L Datasheet




PNA1801L
Phototransistors
PNA1801L (PN168)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Small size, high output power, low cost
ø 3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
30
5
20
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
2
1
2.54
0.5±0.1
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 500 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.8
Response time
Collector saturation voltage
tr, tf*2
VCE(sat)
VCC = 10V, ICE(L) = 1mA, RL = 100
ICE(L) = 1mA, L = 1000 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.005
3
800
35
4
0.2
max
0.5
0.5
Unit
µA
mA
nm
deg.
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1



PNA1801L
Phototransistors
PNA1801L
PC — Ta
120
100
80
60
40
20
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
20
Ta = 25˚C
T = 2856K
16
L = 2000 lx
1750 lx
12 1500 lx
1250 lx
1000 lx
8
750 lx
4 500 lx
250 lx
0
0 4 8 12 16
Collector to emitter voltage
100 lx
20 24
VCE (V)
10 3
10 2
10
1
10 –1
10 –2
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2 10 3
Illuminance L (lx)
10 4
ICEO — Ta
10 3
VCE = 10V
10 2
10
1
ICE(L) — Ta
10 2
VCE = 10V
T = 2856K
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
10 L = 1000 lx
500 lx
60
40
1
20
10 –1
– 40
0
40 80 120
Ambient temperature Ta (˚C )
10 –1
– 40
0
40 80 120
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
10 4 Ta = 25˚C
10 3
10 2
RL = 1k
10 500
100
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 4 Ta = 25˚C
10 3
10 2
RL = 1k
10 500
100
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
2





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