Darlington Phototransistor. PNA2803M Datasheet

PNA2803M Phototransistor. Datasheet pdf. Equivalent

Part PNA2803M
Description Darlington Phototransistor
Feature Darlington Phototransistors PNA2803M Darlington Phototransistor Unit : mm Not soldered 2.0 max. Fo.
Manufacture Panasonic Semiconductor
Datasheet
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PNA2803M
Darlington Phototransistors
PNA2803M
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine with red and infrared light emitting diodes
ø 3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
2
1
2.54
0.5±0.1
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)*3
λP
θ
VCE = 10V
VCE = 10V, L = 2 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.05
Response time
tr, tf*2 VCC = 10V, ICE(L) = 1mA, RL = 100
Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 100 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
850
30
150
0.7
max
0.5
1.5
1.5
Unit
µA
mA
nm
deg.
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 ICE(L) Classifications
Class
Q
ICE(L) (mA) 0.05 to 0.25
R
0.18 to 0.8
S
0.7 to 1.5
1



PNA2803M
PNA2083M
Darlington Phototransistors
PC — Ta
120
100
80
60
40
20
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
24
Ta = 25˚C
T = 2856K
20
16
PC = 100mW
L = 20 lx
12
10 lx
8
5 lx
4
0
0 4 8 12 16
Collector to emitter voltage
2 lx
1 lx
20 24
VCE (V)
ICE(L) — L
10 3
VCE = 10V
Ta = 25˚C
T = 2856K
10 2
10
1
10-1
10-1
1 10
Illuminance L (lx)
102
ICE(L) — Ta
10
VCE = 10V
ICEO — Ta
10 2
VCE = 10V
10
11
10 –1
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
60
40
20
10 –1
– 40
0
40 80 120
Ambient temperature Ta (˚C )
10 –2
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
0
600 700 800 900 1000 1100 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
Sig.IN
Sig.
OUT
50
VCC
Sig. 90%
OUT
RL tr
td
10%
tf
10 3 RL = 1k
500
100
10 2
10
10 –2
10 –1
VCC = 10V
Ta = 25˚C
1 10
Collector photo current ICE(L) (mA)
tf — ICE(L)
Sig.IN
Sig.
OUT
50
VCC
Sig. 90%
OUT
RL tr
td
10%
tf
10 3 RL = 1k
500
10 2 100
10
10 –2
10 –1
VCC = 10V
Ta = 25˚C
1 10
Collector photo current ICE(L) (mA)
2





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