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TRIAC. NTE56045 Datasheet

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TRIAC. NTE56045 Datasheet
















NTE56045 TRIAC. Datasheet pdf. Equivalent













Part

NTE56045

Description

TRIAC



Feature


NTE56045 thru NTE56047 TRIAC, 16A, Sensi tive Gate Description: The NTE56045 thr ough NTE56047 are glass passivated, sen sitive gate TRIACs in an isolated fullâ €“ pack type package designed for use i n general purpose bidirectional switchi ng and phase control applications, wher e high sensitivity is required in all f our quadrants. Absolute Maximum Ratings : Repetitive Peak Of.
Manufacture

NTE Electronics

Datasheet
Download NTE56045 Datasheet


NTE Electronics NTE56045

NTE56045; f–Sate Voltage, VDRM NTE56045 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56046 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56047 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


NTE Electronics NTE56045

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On –State Current (Full Sine Wave, THS â ‰¤ 38°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non –Repetitive Peak On–State Current, ITSM (Full Sine Wave, TJ = +125°C prio r to Surge, with Reapplied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE56045

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16. 7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A 2 I t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec Repetit.





Part

NTE56045

Description

TRIAC



Feature


NTE56045 thru NTE56047 TRIAC, 16A, Sensi tive Gate Description: The NTE56045 thr ough NTE56047 are glass passivated, sen sitive gate TRIACs in an isolated fullâ €“ pack type package designed for use i n general purpose bidirectional switchi ng and phase control applications, wher e high sensitivity is required in all f our quadrants. Absolute Maximum Ratings : Repetitive Peak Of.
Manufacture

NTE Electronics

Datasheet
Download NTE56045 Datasheet




 NTE56045
NTE56045 thru NTE56047
TRIAC, 16A, Sensitive Gate
Description:
The NTE56045 through NTE56047 are glass passivated, sensitive gate TRIACs in an isolated full–
pack type package designed for use in general purpose bidirectional switching and phase control
applications, where high sensitivity is required in all four quadrants.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage, VDRM
NTE56045 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE56046 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56047 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (Full Sine Wave, THS ≤ 38°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.




 NTE56045
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G (–)
MT2 (–), G (–)
MT2 (–), G (+)
Latching Current
MT2 (+), G (+)
MT2 (+), G (–)
MT2 (–), G (–)
MT2 (–), G (+)
Holding Current
On–State Voltage
Gate Trigger Voltage
Off–State Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A
IL VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 20A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID VD = VDRMmax, TJ = +125°C
Critical Rate–of–Rise of
Off–State Voltage
dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
Gate Controlled Turn–On Time
tgt ITM = 20A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
Isolation Characteristics (Ths = +25°C unless otherwise specified)
RMS Isolation Voltage from All
3 Pins to External Heatsink
VISOL f = 50 – 60Hz, Sinusoidal Waveform,
R.H. ≤ 65%, Clean and Dustfree
Capacitance from T2 to
External Heatsink
CISOL f = 1MHz
Min Typ Max Unit
– 2.5 10 mA
– 4.0 10 mA
– 5.0 10 mA
– 11 25 mA
– 3.2 30 mA
– 16 40 mA
– 4.0 30 mA
– 5.5 40 mA
– 4.0 30 mA
– 1.2 1.6 V
– 0.7 1.5 V
0.25 0.4 –
V
– 0.1 0.5 mA
– 50 – V/µs
– 2 – µs
– – 2500 V
– 10 – pF
.181 (4.6) Max
.114 (2.9)
.252
(6.4)
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.622
(15.0)
Max
MT2
.118
(3.0)
Max
.531
(13.5)
Min
MT1
G
.098 (2.5)
.100 (2.54)








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