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TRIAC. NTE56066 Datasheet

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TRIAC. NTE56066 Datasheet
















NTE56066 TRIAC. Datasheet pdf. Equivalent













Part

NTE56066

Description

TRIAC



Feature


NTE56066 & NTE56067 TRIAC, 16A, High Com mutation Description: The NTE56066 and NTE56067 are glass passivated, high com mutation TRIACs in a TO220 type package designed for use in circuits where sta tic and dynamic dV/dt and high dI/dt ca n occur. These devices will commutate t he full rated RMS current at the maximu m rated junction temperature, without t he aid of a snubbe.
Manufacture

NTE Electronics

Datasheet
Download NTE56066 Datasheet


NTE Electronics NTE56066

NTE56066; r. Absolute Maximum Ratings: Repetitive Peak Off–Sate Voltage (Note 1), VDRM NTE56066 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56067 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS O.


NTE Electronics NTE56066

n–State Current (Full Sine Wave, TMB 99°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non –Repetitive Peak On–State Current, ITSM (Full Sine Wave, TJ = +25°C prior to Surge) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16.7ms . . . . . . . . . . .


NTE Electronics NTE56066

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec Repetitive Rate of–Rise of On–State Current after Triggering, dIT/dt (ITM = 20A, IG = 0. 2A, dIG/dt = 0.2A/µs) . .





Part

NTE56066

Description

TRIAC



Feature


NTE56066 & NTE56067 TRIAC, 16A, High Com mutation Description: The NTE56066 and NTE56067 are glass passivated, high com mutation TRIACs in a TO220 type package designed for use in circuits where sta tic and dynamic dV/dt and high dI/dt ca n occur. These devices will commutate t he full rated RMS current at the maximu m rated junction temperature, without t he aid of a snubbe.
Manufacture

NTE Electronics

Datasheet
Download NTE56066 Datasheet




 NTE56066
NTE56066 & NTE56067
TRIAC, 16A, High Commutation
Description:
The NTE56066 and NTE56067 are glass passivated, high commutation TRIACs in a TO220 type
package designed for use in circuits where static and dynamic dV/dt and high dI/dt can occur. These
devices will commutate the full rated RMS current at the maximum rated junction temperature, without
the aid of a snubber.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56066 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56067 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (Full Sine Wave, TMB 99°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +25°C prior to Surge)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.




 NTE56066
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Latching Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Holding Current
OnState Voltage
Gate Trigger Voltage
OffState Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A, Note 2
IL VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 20A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID VD = VDRMmax, TJ = +125°C
2 18 50 mA
2 21 50 mA
2 34 50 mA
31 60 mA
34 90 mA
30 60 mA
31 60 mA
1.2 1.5 V
0.7 1.5 V
0.25 0.4
V
0.1 0.5 mA
Critical RateofRise of
OffState Voltage
dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
1000 4000 V/µs
Critical RateofChange of
Commutating Current
dIcom/dt VDM = 400V, TJ = +125°C, ITRMS = 16A, 28 A/ms
without Snubber, Gate Open
Gate Controlled TurnOn Time
tgt ITM = 12A, VD = VDRMmax, IG = 0.1A, 2 µs
dIG/dt = 5A/µs
Note 2. Device does not trigger in the MT2 (), G (+) quadrant.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
MT2
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2








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